Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Guilherme Koszeniewski Rolim"'
Autor:
Dheryck Schwendler Cabeda, Guilherme Koszeniewski Rolim, Gabriel Vieira Soares, Antonio Marcos Helgueira de Andrade, Cláudio Radtke
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7294d2ecec5571e1c5958177b476acd7
https://doi.org/10.2139/ssrn.4190853
https://doi.org/10.2139/ssrn.4190853
Autor:
Silma Alberton Corrêa, Eduardo Nunes, Claudio Radtke, Daniel Eduardo Weibel, Guilherme Koszeniewski Rolim, Gabriel Vieira Soares, Gabriela Copetti
Publikováno v:
The Journal of Physical Chemistry C. 122:16333-16338
The reversibility of graphene photochemical chlorination was investigated. A high content of Cl is obtained through photochlorination, without changing C hybridization. To accommodate the incorporated Cl, graphene corrugation takes place. However, du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7a87d78210f31e9214db7f253ecd89
https://doi.org/10.1021/acs.jpcc.8b02121
https://doi.org/10.1021/acs.jpcc.8b02121
Autor:
Lauren A. Galves, Guilherme Koszeniewski Rolim, Claudio Radtke, Silma Alberton Corrêa, Gabriel Vieira Soares, Joao Marcelo J. Lopes
Publikováno v:
Applied Surface Science. 427:825-829
Modifications of single layer graphene transferred to SiO2/Si substrates resulting from annealing in water vapor were investigated. Near edge X-ray absorption fine structure spectroscopy evidenced graphene puckering between 400 and 500 °C. Synchrotr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f064cb2657757ca8cfd066073e6d39c5
https://doi.org/10.1016/j.apsusc.2017.09.055
https://doi.org/10.1016/j.apsusc.2017.09.055
Autor:
Cláudio Radtke, Guilherme Koszeniewski Rolim, Gabriel Vieira Soares, Silma Alberton Corrêa, Taís Orestes Feijó
Publikováno v:
Journal of Applied Physics. 128:225702
In the present work, we investigated the interaction of hydrogen with single-layer graphene. Fully hydrogenated monolayer graphene was predicted to be a semiconductor with a bandgap of 3.5 eV in contrast to the metallic behavior of its pristine count
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6280408d9c0532e2e21c8326209073
https://doi.org/10.1063/5.0028822
https://doi.org/10.1063/5.0028822
Publikováno v:
The Journal of Physical Chemistry C. 119:4079-4084
Ge is a promising material to improve transistor performance. However, finding an efficient passivation strategy for this semiconductor is still a challenge. Annealing in O2 of metal/dielectric sta...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271fabe8c3041798b66e6b96244c04ff
https://doi.org/10.1021/jp511127c
https://doi.org/10.1021/jp511127c
Publikováno v:
Applied Catalysis A: General. 403:119-127
Heterogeneous catalyst was obtained by the direct immobilization of molybdenum compound on montmorillonite K10 clay. The resultant solid was characterized by inductively coupled plasma optical emission spectrometry (ICP-OES), X-ray diffractometry (XR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae557c84256ab05a3225ebc6b7b0d0a
https://doi.org/10.1016/j.apcata.2011.06.021
https://doi.org/10.1016/j.apcata.2011.06.021
Publikováno v:
ECS Solid State Letters. 2:N43-N45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eca8f6704ffca45700e6b9eabc3829d
https://doi.org/10.1149/2.009312ssl
https://doi.org/10.1149/2.009312ssl
Autor:
Cristiano Krug, Guilherme Koszeniewski Rolim, M. E. H. M. da Costa, F. L. Freire, S. R. M. da Silva, L. Miotti, Gabriel Vieira Soares, Claudio Radtke, I. J. R. Baumvol
Publikováno v:
Applied Physics Letters. 100:191907
Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d785f748d1b9c6ab5796c9b0f18b14ca
https://doi.org/10.1063/1.4712619
https://doi.org/10.1063/1.4712619
Autor:
Samoel Renan Mello da Silva, Guilherme Koszeniewski Rolim, Gabriel Vieira Soares, Claudio Radtke, Israel Jacob Rabin Baumvol, Cristiano Krug
Publikováno v:
ECS Meeting Abstracts. :768-768
Thermal stability of HfO2/GeO2 stacks was investigated. These structures were stable on Si up to 600 oC following annealing in N2. Samples prepared on Ge yielded direct evidence of migration and loss of both Ge and O. This contrasting behavior is a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77f75876e2fb82fdcfbc5c73640c8d99
https://doi.org/10.1149/ma2012-01/17/768
https://doi.org/10.1149/ma2012-01/17/768