Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Guilherme F. Ferreira"'
Autor:
J.M. Alonso, Marco A. Dalla Costa, Carlos Henrique Barriquello, Renan R. Duarte, Guilherme F. Ferreira
Publikováno v:
Eletrônica de Potência. 23:89-97
Publikováno v:
IAS
Since their introduction in the early 2000s, gallium nitride transistors have emerged as a replacement for the traditional Si-based MOSFETs in power electronics applications. In dual-stage LED drivers, a solution to keep the converter simple and to r
Publikováno v:
IAS Annual Meeting
Wide bandgap (WBG) semiconductors have emerged as an attractive option for silicon (Si) replacement in the recent years. Among the new materials, gallium nitride (GaN) has been considered as the most promising candidate. This paper presents a compari
Autor:
Guilherme F. Ferreira, Marco A. Dalla Costa, Jorge Garcia, Alexandre Campos, Douglas Camponogara
Publikováno v:
IEEE Transactions on Industry Applications. 49:2437-2443
This paper presents a converter structure applied to supply high-power light-emitting diodes (LEDs) from the ac line in a street lighting system, based on the reduced redundant power processing principle. To guarantee high power factor and low harmon
Publikováno v:
IAS
This paper presents a converter structure applied to supply high power Light Emitting Diodes (LEDs) from the mains in a street lighting system, based on the Reduced Redundant Power Processing (R2P2) principle. To guarantee high power factor and low h