Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Guigang Cai"'
Autor:
Yan Lu, Junwei Huang, Zhiguo Tong, Tingxu Hu, Wen-Liang Zeng, Mo Huang, Xiangyu Mao, Guigang Cai
Publikováno v:
IEEE Open Journal of the Solid-State Circuits Society, Vol 4, Pp 12-24 (2024)
With the surging demands for higher current at sub-1-V supply level in high-performance digital systems, high-efficiency and high-current-density power converters are essential for system integration. Higher voltage supply buses are emerging for high
Externí odkaz:
https://doaj.org/article/e0f2979fb00b4c609ca7447a733f2ba1
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:1758-1768
Autor:
Wen-Liang Zeng, Guigang Cai, Chon-Fai Lee, Chi-Seng Lam, Yan Lu, Sai-Weng Sin, Rui P. Martins
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Publikováno v:
IEEE Transactions on Power Electronics. 36:4326-4337
This article presents a fully integrated flipped voltage follower (FVF) based low-dropout (LDO) regulator with enhanced full-spectrum power supply rejection (PSR) and unity-gain bandwidth over 400MHz for noise-sensitive circuits. Following the study
Publikováno v:
Journal of Semiconductors. 44:040301
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Yang Liu, Shuangxing Zhao, Guofeng Li, Chenchang Zhan, Qiwei Huang, Guigang Cai, Lidan Wang, Junyao Tang
Publikováno v:
Microelectronics Journal. 68:7-13
In this paper, a current-mode bandgap reference (BGR) circuit with cascode current mirrors and improved frequency compensation for achieving high power supply ripple rejection (PSRR) is presented. By slightly modifying a conventional frequency compen
Publikováno v:
VLSI-SoC
This paper presents a 2×VDD-enabled fully-integrated CMOS low-dropout (LDO) regulator with fast transient response for cost-effective SoC power management applications with elevated-VDD supply. All the MOS transistors used in the proposed LDO regula
Publikováno v:
2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).