Zobrazeno 1 - 10
of 938
pro vyhledávání: '"Guido, Groeseneken"'
Autor:
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 633-641 (2018)
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-
Externí odkaz:
https://doaj.org/article/86d17f8e8f43468eb80f4139ffe8fbdf
Autor:
Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 658-663 (2018)
Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on
Externí odkaz:
https://doaj.org/article/709d3d9d18f44de7bb0fffa8ea46a664
Autor:
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1048-1055 (2018)
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their
Externí odkaz:
https://doaj.org/article/b3e6abfea7bb4f1db4bad4d5dfcd0818
Autor:
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e9e103b75b87d8398d643fd14ea1061
https://doi.org/10.1109/irps48203.2023.10118211
https://doi.org/10.1109/irps48203.2023.10118211
Autor:
Zhicheng Wu, Jacopo Franco, Anne Vandooren, Hiroaki Arimura, Lars-Ake Ragnarsson, Philippe Roussel, Ben Kaczer, Dimitri Linten, Nadine Collaert, Guido Groeseneken
Publikováno v:
IEEE Transactions on Electron Devices. 69:915-921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373894dfbd4ac69b6c7f2d5d50ef012d
https://doi.org/10.1109/ted.2022.3141983
https://doi.org/10.1109/ted.2022.3141983
Autor:
Azrif B. Manut, Jian Fu Zhang, Meng Duan, Zhigang Ji, Wei Dong Zhang, Ben Kaczer, Tom Schram, Naoto Horiguchi, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 15-21 (2016)
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch ti
Externí odkaz:
https://doaj.org/article/f776b6bf276f4192bd9ccd77104c6dbf
Autor:
Simon Van Beek, Koen Martens, Philippe Roussel, Yueh Chang Wu, Woojin Kim, Siddharth Rao, Johan Swerts, Davide Crotti, Dimitri Linten, Gouri Sankar Kar, Guido Groeseneken
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055909-055909-6 (2018)
STT-MRAM is a promising non-volatile memory for high speed applications. The thermal stability factor (Δ = Eb/kT) is a measure for the information retention time, and an accurate determination of the thermal stability is crucial. Recent studies show
Externí odkaz:
https://doaj.org/article/fb0d176dce464a4f923e3918ec51ad03
Autor:
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
Publikováno v:
Transactions on Cryptographic Hardware and Embedded Systems, Vol 2018, Iss 1 (2018)
The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions. The Oxygen vacancies-based resistive RAM (RRAM), has been claimed to be
Externí odkaz:
https://doaj.org/article/fa1fed3f42b64649b40b85669dcabb36
Autor:
Dimitri Linten, Philippe Roussel, Z. Wu, Ben Kaczer, Brecht Truijen, Jacopo Franco, Guido Groeseneken
Publikováno v:
IEEE Transactions on Electron Devices. 68:3246-3253
A comprehensive investigation on the hot-carrier-induced interface state generation and its impact on carrier mobility in nMOSFET is performed. ${I}$ – ${V}$ compact modeling and charge pumping (CP) characterization are used as independent ways to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e09f6b7fb00bda277e679defb2763ec
https://doi.org/10.1109/ted.2021.3080657
https://doi.org/10.1109/ted.2021.3080657
Autor:
Bart F. Vermeulen, Jackson Wu, Johan Swerts, Sebastien Couet, Iuliana P. Radu, Guido Groeseneken, Christophe Detavernier, Johanna K. Jochum, Margriet Van Bael, Kristiaan Temst, Amit Shukla, Shinji Miwa, Yoshishige Suzuki, Koen Martens
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055933-055933-6 (2017)
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\CoFe(B) interfaces or using an adjac
Externí odkaz:
https://doaj.org/article/9b2e2c6d21644ac8a39534c0d78cb527