Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Gui-Feng Chen"'
Publikováno v:
Journal of Fuel Chemistry and Technology. 49:436-443
A vitrinite-rich low rank coal, Baishihu (BSH) coal with moderate sulfur content was treated by dehydration and crushing. The treated samples were pyrolyzed in an alloy tubular reactor under 2 MPa. Influence of iron catalyst and atmosphere on sulfur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e6a847603209ebd282e7523e22c170
https://doi.org/10.1016/s1872-5813(21)60058-0
https://doi.org/10.1016/s1872-5813(21)60058-0
Autor:
Wai-Xi Liu, Wen-Hong Lin, Song Wu, Sen Ling, Jin-Jiang Fu, Xing Liang, Zhi-Tao Chen, Gui-Feng Chen
Publikováno v:
Networking
Fine-grained, real-time, and accurate monitoring data can better help detect equipment failure and perform traffic engineering. However, existing in-band network telemetry (INT) implementations still exhibit a few drawbacks such as lack of real-time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f853749dfb8b8323f9fa85607ebadbc7
https://doi.org/10.23919/ifipnetworking52078.2021.9472807
https://doi.org/10.23919/ifipnetworking52078.2021.9472807
Publikováno v:
Advanced Materials Research. :293-296
The Czochralski silicon (CZ-Si) samples were irradiated with 1.5 MeV electrons and annealed at 200 - 450 °C. It was investigated the effect of irradiation dose and interstitial oxygen content [Oi] on VO concentration by Fourier transform infrared sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbdfbea1b86ea17605005f18920ac25
https://doi.org/10.4028/www.scientific.net/amr.1004-1005.293
https://doi.org/10.4028/www.scientific.net/amr.1004-1005.293
Publikováno v:
Advanced Materials Research. 427:115-118
Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with oxygen and forms the complexes of vacancy and oxygen (VmOn)such as VO, VO2, and VO3. These complexes of vacancy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3700aa7ff4827d9b5707899f6fa54a58
https://doi.org/10.4028/www.scientific.net/amr.427.115
https://doi.org/10.4028/www.scientific.net/amr.427.115
Publikováno v:
Materials Science Forum. :1113-1116
Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231eaea85b1b01b2de0d54af8029f5a6
https://doi.org/10.4028/www.scientific.net/msf.561-565.1113
https://doi.org/10.4028/www.scientific.net/msf.561-565.1113
Publikováno v:
Rare Metals. 25:55-58
The oxygen-related defects in CZ silicon during electron irradiation (1.5 MeV) and subsequent annealing in the range of 150–600 °C were investigated by means of FTIR. In the electron irradiation CZ-Si, vacancy-oxygen complex is one of the dominant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5673cc207e6430dc0d8839ea8164172b
https://doi.org/10.1016/s1001-0521(08)60052-2
https://doi.org/10.1016/s1001-0521(08)60052-2
Autor:
Dong-feng Chen, Gui-feng Chen, Qiao-yun Ma, Xing-hua Li, Sheng-li Niu, Yang-xian Li, Ping-juan Niu, Li-li Cai
Publikováno v:
Transactions of Nonferrous Metals Society of China. 16:s109-s112
A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fouri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f148dcd4b46c445d6baa4047d325ebd4
https://doi.org/10.1016/s1003-6326(06)60154-4
https://doi.org/10.1016/s1003-6326(06)60154-4
Autor:
Zhao-Jun Mo, Jun Shen, Gui-Feng Chen, Li-Qin Yan, Xinqi Zheng, Jian-Feng Wu, Cheng-Chun Tang, Ji-Rong sun, Bao-Gen Shen
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 17, p17A909-1-17A909-3, 3p
Publikováno v:
Transactions of Nonferrous Metals Society of China. 16:s113-s115
The difference of annealing behaviors of vacancy-oxygen complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×10 17 n/cm 3 and S2 1.07×10 19 n/cm 3 ) were studied. The results show that the VO is one of the main defects formed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b99258ce2c785e837f5dd59fb182fc
https://doi.org/10.1016/s1003-6326(06)60155-6
https://doi.org/10.1016/s1003-6326(06)60155-6
Autor:
Shui-lian, Su, Yi-ming, Yan, Hua, Liao, Gui-feng, Chen, Rui-qi, Zhang, Qiong-jun, Xie, Xiao, Le, Ya-qiong, Hu, Xue-ying, Zeng, Hai-ying, Lan, Rui-lian, Xie, Zhen, Huang
Publikováno v:
Zhongguo ji sheng chong xue yu ji sheng chong bing za zhi = Chinese journal of parasitologyparasitic diseases. 25(3)
Serum and stool samples were collected from 322 undergraduate students in medical school. Using stool in vitro cultivation as golden standard, 178 cases were found Blastocystis hominis positive and 144 were negative. Dot-ELISA was used to examine the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::05dea65ad9862b42820092010e93c993
https://pubmed.ncbi.nlm.nih.gov/18038792
https://pubmed.ncbi.nlm.nih.gov/18038792