Zobrazeno 1 - 10
of 148
pro vyhledávání: '"Guerrero, Rubén"'
Autor:
Guerrero, Rubén Darío
In the quest to harness the power of quantum computing, training quantum neural networks (QNNs) presents a formidable challenge. This study introduces an innovative approach, integrating the Bees Optimization Algorithm (BOA) to overcome one of the mo
Externí odkaz:
http://arxiv.org/abs/2408.08836
Autor:
Wang, Yuanheng, Hait, Diptarka, Johnson, K. Grace, Fajen, O. Jonathan, Zhang, Juncheng Harry, Guerrero, Rubén D., Martínez, Todd J.
Publikováno v:
J. Chem. Phys. 161, 174118 (2024)
The increasing availability of GPUs for scientific computing has prompted interest in accelerating quantum chemical calculations through their use. The complexity of integral kernels for high angular momentum basis functions however often limits the
Externí odkaz:
http://arxiv.org/abs/2406.14920
Autor:
Anadón, Alberto, Pezo, Armando, Arnay, Iciar, Guerrero, Rubén, Gudín, Adrián, Ghanbaja, Jaafar, Camarero, Julio, Manchon, Aurelien, Petit-Watelot, Sebastien, Perna, Paolo, Rojas-Sánchez, Juan-Carlos
The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a re
Externí odkaz:
http://arxiv.org/abs/2406.04110
Autor:
Gudín, Adrián, Anadón, Alberto, Arnay, Iciar, Guerrero, Rubén, Camarero, Julio, Petit-Watelot, Sebastien, Perna, Paolo, Rojas-Sánchez, Juan-Carlos
The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data sto
Externí odkaz:
http://arxiv.org/abs/2311.13400
Autor:
Lancaster, Suzanne, Arnay, Iciar, Guerrero, Ruben, Gudín, Adrían, Mikolajick, Thomas, Perna, Paolo, Slesazeck, Stefan
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via
Externí odkaz:
http://arxiv.org/abs/2208.14061
Autor:
Lancaster, Suzanne, Arnay, Iciar, Guerrero, Ruben, Gudín, Adrian, Guedeja-Marrón, Alejandra, Toledano, Jose Manuel Diez, Gärtner, Jan, Anadón, Alberto, Varela, Maria, Camarero, Julio, Mikolajick, Thomas, Perna, Paolo, Slesazeck, Stefan
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD)
Externí odkaz:
http://arxiv.org/abs/2109.09543
Autor:
Ruiz-Gómez, Sandra, Guerrero, Rubén, Khaliq, Muhammad W., Fernández-González, Claudia, Prat, Jordi, Valera, Andrés, Finizio, Simone, Perna, Paolo, Camarero, Julio, Pérez, Lucas, Aballe, Lucía, Foerster, Michael
The spin Hall effect and its inverse are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin orbit coupling even in non-magnetic conductors. However
Externí odkaz:
http://arxiv.org/abs/2107.02620
Autor:
Olleros-Rodríguez, Pablo, Guerrero, Ruben, Camarero, Julio, Chubykalo-Fesenko, Oksana, Perna, Paolo
Publikováno v:
ACS Appl. Mater. Interfaces 2020
Recent advances on the stabilization and manipulation of chiral magnetization configurations in systems consisting in alternating atomic layers of ferromagnetic and non-magnetic materials hold promise of innovation in spintronics technology. The low
Externí odkaz:
http://arxiv.org/abs/1912.09100
Publikováno v:
In Molecular Genetics and Metabolism March 2023 138(3)
Akademický článek
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