Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Gueorguiev, V.K"'
Autor:
Hadjichristov, G.B., Gueorguiev, V.K., Ivanov, Tz.E., Marinov, Y.G., Ivanov, V.G., Faulques, E.
Publikováno v:
In Organic Electronics 2008 9(6):1051-1060
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2006 243(2):340-344
Publikováno v:
In Microelectronics Reliability 2003 43(1):57-60
Publikováno v:
In Microelectronics Journal 1 April 2001 32(4):301-304
Publikováno v:
In Materials Science & Engineering B 2001 83(1):223-226
Publikováno v:
In Microelectronics Journal August 2000 31(8):663-666
Publikováno v:
In Microelectronics Journal March 2000 31(3):207-211
Publikováno v:
In Solid State Electronics 1999 43(7):1259-1266
Publikováno v:
In Microelectronics Reliability 1999 39(6):885-889
Autor:
Hadjichristov, G.B., Gueorguiev, V.K., Ivanov, T.E., Marinov, Y.G., Ivanov, V.G., Faulques, Eric
Publikováno v:
Journal of Optoelectronics and Advanced Materials
Journal of Optoelectronics and Advanced Materials, 2009, 11 (9), pp.1206
Journal of Optoelectronics and Advanced Materials, 2009, 11 (9), pp.1206
International audience; The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::913be88b28cdc15af07e813bde0d7112
https://hal.archives-ouvertes.fr/hal-00432855
https://hal.archives-ouvertes.fr/hal-00432855
