Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Guenther Traenkle"'
Autor:
W. Pittroff, J. Maege, Peter Ressel, R. Staske, Guenther Traenkle, Arne Knauer, G. Beister, Götz Erbert, A. Klein, Frank Bugge, Juergen Sebastian
Publikováno v:
IEEE Transactions on Advanced Packaging. 24:434-441
High power diode lasers have become more and more important to industrial and medical applications. In contrast to low power applications, long cavity lasers or laser bars are used in this field and mounting quality influences considerably laser perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48eac101f6eccb420c296086ea3e2c48
https://doi.org/10.1109/6040.982826
https://doi.org/10.1109/6040.982826
Autor:
Bernd Köhler, Stefan Hengesbach, Götz Erbert, Jens Biesenbach, Hans-Dieter Hoffmann, Andre Maaßdorf, Ulrich Witte, S. Knigge, Ralf Hubrich, Heiko Kissel, Guenther Traenkle, Paul Crump, Frank Bugge
Publikováno v:
SPIE Proceedings.
Broad area lasers with narrow spectra are required for many pumping applications and for wavelength beam combination. Although monolithically stabilized lasers show high performance, some applications can only be addressed with external frequency sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0862316addbed847215451771d618bab
https://doi.org/10.1117/12.2000528
https://doi.org/10.1117/12.2000528
Autor:
Frank Bugge, Hans Wenzel, Guenther Traenkle, Matthias Braun, Peter Ressel, Andreas Klehr, J. Fricke, Arne Knauer, G. Erbert
Publikováno v:
Novel In-Plane Semiconductor Lasers IV.
Experimental investigations on RW and BA DFB lasers emitting in the wavelength range between 760 and 790 nm are presented. The maximum output powers are 300 mW and 2.4 W for the RW and BA devices, respectively. The optical spectra of the RW DFB laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca092472cbcf031a6d031f78a13336ef
https://doi.org/10.1117/12.590096
https://doi.org/10.1117/12.590096
Autor:
Juergen Sebastian, Peter Ressel, Ralf Huelsewede, G. Erbert, Guenther Traenkle, Hans Wenzel, W. Pittroff, Bernd Sumpf, Arne Knauer, Jörg Fricke
Publikováno v:
SPIE Proceedings.
Tensile strained GaAsP quantum wells embedded in AlGaAs waveguide structures are used to realize high power, high brightness short wavelength tapered laser diodes. At 735nm these laser diodes show up to 3W nearly diffraction limited output power with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7944d114b6ed3d87e577678d5d7f9d1
https://doi.org/10.1117/12.475763
https://doi.org/10.1117/12.475763
Publikováno v:
Photonics, Devices, and Systems II.
We present angled-grating distributed feedback lasers (α-DFB lasers) with high beam quality and high output power of several Watts at the wavelength λ = 1060 nm. The spatial and spectral single mode emission of such lasers is achieved by a filterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f2914a92530159219e3866dcc6d96dd
https://doi.org/10.1117/12.498241
https://doi.org/10.1117/12.498241
Autor:
Guenther Traenkle, G. Erbert, Frank Bugge, Ralf Huelsewede, G. Beister, Hans Wenzel, W. Pittroff, Juergen Sebastian, Marcus Weyers, Arne Knauer
Publikováno v:
In-Plane Semiconductor Lasers V.
In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950 nm and on 810 nm- laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2 mm long diode lasers show a high wall plug efficiency above 50% at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ab6baa2dc75ddc12178cc57091bd13
https://doi.org/10.1117/12.429788
https://doi.org/10.1117/12.429788
Autor:
K. Vogel, Marcus Weyers, Juergen Sebastian, Guenther Traenkle, A. Oster, Wilfred John, Martin Zorn, Jörg Fricke
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers V.
Red VCSELs for emission wavelengths near 650nm find applications in emerging technologies such as plastic-fiber-based data communication. However, these devices are challenging due to low band offsets and high electrical and thermal resistivity of es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d0a696246cc5387abe8b36ef958ccf
https://doi.org/10.1117/12.424801
https://doi.org/10.1117/12.424801
Autor:
Arne Knauer, R. Staske, J. Maege, Guenther Traenkle, G. Erbert, K. Vogel, Juergen Sebastian, Frank Bugge, Hans Wenzel
Publikováno v:
SPIE Proceedings.
Tensile-strained GaAsP quantum wells (QWs) embedded in AJGaAs waveguide and cladding layers are an alternativeapproach for the wavelength range 700-800 nm. We will present a detailed experimental and theoretical study of thedependence of the threshol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555c964027ac6676d6ed9b68b805f0d2
https://doi.org/10.1117/12.382104
https://doi.org/10.1117/12.382104
Autor:
R. Staske, G. Beister, Peter Ressel, Juergen Sebastian, Guenther Traenkle, Hans Wenzel, W. Pittroff, G. Erbert, Arne Knauer, J. Maege, Marcus Weyers
Publikováno v:
SPIE Proceedings.
We report device properties and results of lifetime tests for Al-free InGaAs/InGaAsP/InGaP broad-area (BA) laser diodes, emitting at 950 nm. The epitaxial layers were grown by metal organic vapor phase epitaxy (MOVPE). The mounted diode lasers have a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38ef1668d07f6ecf183116cab347ac1
https://doi.org/10.1117/12.380547
https://doi.org/10.1117/12.380547
Autor:
G. Erbert, R. Staske, Guenther Traenkle, Marcus Weyers, Juergen Sebastian, J. Maege, Frank Bugge, Hans Wenzel, A. Thies, A. Oster, Arne Knauer
Publikováno v:
Scopus-Elsevier
In this paper, we present results on diode lasers in the wavelength range between 715 nm and 840 nm with Al-free QWs which are embedded in a high-quality AlGaAs LOC broadened waveguide structure with low optical loss and a small vertical far field di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ead609d8092773e4820653557faafbce
https://doi.org/10.1117/12.344535
https://doi.org/10.1117/12.344535