Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Guenther Ruhl"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 1056-1064 (2017)
Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on t
Externí odkaz:
https://doaj.org/article/e3570e9d03c744d7ba078325b5e72d57
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 1056-1064 (2017)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bef80a8e922035b0ee4af471d5d1db2b
https://doaj.org/article/e3570e9d03c744d7ba078325b5e72d57
https://doaj.org/article/e3570e9d03c744d7ba078325b5e72d57
Autor:
Matthias König, Michael-Maximilian Lemberger, Guenther Ruhl, Alexander Zöpfl, Frank-Michael Matysik, Thomas Hirsch
Publikováno v:
Faraday Discuss.. 173:403-414
Reduced graphene oxide (rGO) was investigated as a material for use in chemiresistive gas sensors. The carbon nanomaterial was transferred onto a silicon wafer with interdigital gold electrodes. Spin coating turned out to be the most reliable transfe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04401c8ddba4bf14c1b14934c04adc52
https://doi.org/10.1039/c4fd00086b
https://doi.org/10.1039/c4fd00086b
Publikováno v:
Thin Solid Films. 520:4576-4579
Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta 2 O 5 , Ti–Ta–O, Sr–Ta–O and Nb–Ta–O oxide films for Metal–Insulator–Metal (MIM) capacitors used in back-end of line for Radio Frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e698e2d631a6545f4dd8ae6a349b9b52
https://doi.org/10.1016/j.tsf.2011.10.199
https://doi.org/10.1016/j.tsf.2011.10.199
Publikováno v:
ECS Transactions. 41:53-61
Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc5e179d760df8faa73a51667872395
https://doi.org/10.1149/1.3633654
https://doi.org/10.1149/1.3633654
Publikováno v:
Microelectronic Engineering. 88:2447-2451
NbTaO"x mixed oxides were deposited by ALD in ASM Pulsar(R) 2000 R&D reactor using TaF"5 and NbF"5 as metal precursors. Two deposition processes were evaluated, one with only H"2O as the oxidizer, and the other with a combination of H"2O and O"3. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd66fe7d90443b9f2ad63e86a0b7fcc
https://doi.org/10.1016/j.mee.2011.01.050
https://doi.org/10.1016/j.mee.2011.01.050
Publikováno v:
Microelectronic Engineering. 88:1521-1524
Metal-Insulator-Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO"3 dielectric and Al"2O"3/SrTiO"3/Al"2O"3 multilayer dielectric have been deposited on TaN and TiN bottom electrodes. The MIM stacks have been analyzed and compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07da2920004603850a70a2d2f1faba9
https://doi.org/10.1016/j.mee.2011.03.022
https://doi.org/10.1016/j.mee.2011.03.022
Autor:
Martynas Skapas, V. Kubilius, M. Lukosius, Adulfas Abrutis, Ch. Wenger, A. Zauner, C. Baristiran-Kaynak, Guenther Ruhl
Publikováno v:
Microelectronic Engineering. 88:1529-1532
Ce-Al-O thin films were prepared on 70nm TiN/Si(100) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal-insulator-metal (MIM) applications. Depositions were carried out at 400^oC using two separate Ce and Al p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be25d2175777b3ca1e6a796462a90289
https://doi.org/10.1016/j.mee.2011.03.044
https://doi.org/10.1016/j.mee.2011.03.044
Autor:
Bernd Tillack, C. Baristiran Kaynak, M. Lukosius, Tom E. Blomberg, Ch. Wenger, Ioan Costina, Guenther Ruhl
Publikováno v:
Thin Solid Films. 519:5734-5739
Metal–Insulator–Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d550d165cd26d9e79c047b4288a4b79b
https://doi.org/10.1016/j.tsf.2011.01.001
https://doi.org/10.1016/j.tsf.2011.01.001
Publikováno v:
Thin Solid Films. 519:3831-3834
Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c407d389473a8677d636f7f3b3e054
https://doi.org/10.1016/j.tsf.2011.01.239
https://doi.org/10.1016/j.tsf.2011.01.239