Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Guenter Reisse"'
Publikováno v:
Applied Physics A. 121:689-693
Experimental results on ablation and microstructuring of fused silica (Corning 7980 HPFS Standard Grade) using femtosecond laser pulses will be presented. In particular, the ablation behavior of the material at the laser wavelengths of 775, 387 and 2
Autor:
Hagen Gruettner, Guenter Reisse, Steffen Weissmantel, Manuel Pfeiffer, Franka Marquardt, Katja Guenther, Andy Engel
Publikováno v:
Applied Physics A. 110:655-659
Ripple formation in consequence of ultrashort laser pulse irradiation of materials is a well-known phenomenon. We have investigated the formation of ripples in various metals, i.e. steel, tungsten carbide hard metal, as well as in superhard ta-C film
Publikováno v:
Physics Procedia. 12:60-66
New results on three-dimensional micro-structuring of tungsten carbide hard metal and steel using femtosecond laser pulses will be presented. For the investigations, a largely automated high-precision fs-laser micromachining station was used. The fs-
Publikováno v:
Applied Physics A. 101:491-495
New results on three-dimensional microstructuring of fused silica, sapphire, calcium fluoride, magnesium fluoride, and PTFE using pulsed laser ablation at 157 nm wavelength are presented. A largely automated high-precision fluorine laser micromachini
Publikováno v:
Applied Surface Science. 253:2796-2800
The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse
Publikováno v:
Diamond and Related Materials. 11:1276-1280
The mechanical stresses in cubic boron nitride films prepared by ion-beam-assisted pulsed laser deposition were investigated both ex-situ and in-situ in dependence of the deposition parameters. The stresses, which are in the range of 4 to 15 GPa, are
Publikováno v:
Applied Physics A. 74:41-45
Cubic boron nitride (c-BN) films of 200–420 nm thickness and high phase purity were deposited on silicon (100) substrates by ion-assisted pulsed laser deposition (IA PLD)from a boron nitride target using a KrF-excimer laser, and by plasma-enhanced
Autor:
Steffen Weissmantel, Guenter Reisse
Publikováno v:
Diamond and Related Materials. 10:1973-1982
Cubic boron nitride films were prepared by ion-assisted pulsed laser deposition. High c-BN growth rates of 50 nm/min were achieved using a high laser fluence of more than 30 J/cm 2 at an ion beam energy of 600–700 eV and an ion-current density of 4
Autor:
Steffen Weissmantel, Guenter Reisse
Publikováno v:
Applied Surface Science. :428-433
Boron nitride films were prepared by pulsed laser ablation from a boron nitride target using a KrF-excimer laser, where the growing films were deposited in nitrogen atmosphere or bombarded by a nitrogen/argon ion beam. Films deposited at ion-to-arriv
Autor:
Steffen Weissmantel, Guenter Reisse
Publikováno v:
Applied Physics A: Materials Science & Processing. 69:S749-S753
Hexagonal and cubic boron nitride films are deposited by pulsed laser ablation from a boron nitride and a boron target using a KrF excimer laser. Hexagonal films are deposited in nitrogen as background gas or with nitrogen/argon ion bombardment at io