Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Guansheng Yuan"'
Publikováno v:
IEEE Access, Vol 8, Pp 50465-50471 (2020)
C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300°C) atomic layer deposition grown Al2O3 dielect
Externí odkaz:
https://doaj.org/article/e821fe0c7fdd4fea81640577f72d1a0f
Autor:
Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 82-87 (2019)
High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at VG
Externí odkaz:
https://doaj.org/article/4ce5a38efa9f49b9b0b42eb9e2a31cec
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065026-065026-6 (2018)
Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The de
Externí odkaz:
https://doaj.org/article/17fbb9b60a8d49f19aa552bea1d5be26
Publikováno v:
IEEE Access. 8:50465-50471
C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300°C) atomic layer deposition grown Al2O3 dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550472542dd29479200d603404f49640
https://doi.org/10.1109/access.2020.2979985
https://doi.org/10.1109/access.2020.2979985
Autor:
Jincheng Zhang, Jinfeng Zhang, Kai Su, Chunfu Zhang, Zhiyu Lin, Ren Zeyang, Chen Wanjiao, Guansheng Yuan, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 82-87 (2019)
High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2- $\mu \text{m}$ gate length shows threshold voltage of −1.0 V, and a drain current of 51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe0bdeb9fc90c14dd3f5abaccfa8a5c7
https://ieeexplore.ieee.org/document/8531777/
https://ieeexplore.ieee.org/document/8531777/
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065026-065026-6 (2018)
Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3039753be9e0edd59450c8b6a824c8cd
https://doaj.org/article/17fbb9b60a8d49f19aa552bea1d5be26
https://doaj.org/article/17fbb9b60a8d49f19aa552bea1d5be26