Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Guanqun Qiu"'
Autor:
Lei Tang, Huaping Jiang, Xiaohan Zhong, Guanqun Qiu, Hua Mao, Xiaofeng Jiang, Xiaowei Qi, Changhong Du, Qianlei Peng, Li Liu, Li Ran
Publikováno v:
IEEE Transactions on Power Electronics. 38:1155-1165
Publikováno v:
IEEE Transactions on Industrial Electronics. :1-11
Autor:
Hua Mao, Huaping Jiang, Li Ran, Jiayu Hu, Guanqun Qiu, Jingfeng Wei, Haoyu Chen, Xiaohan Zhong, Nianlei Xiao, Liwei Wang, Minxiang Yang
Publikováno v:
IEEE Transactions on Power Electronics. 38:1092-1103
Publikováno v:
IEEE Transactions on Power Electronics. 37:13513-13524
Autor:
Huaping Jiang, Xiaowei Qi, Guanqun Qiu, Xiaohan Zhong, Lei Tang, Hua Mao, Zebing Wu, Honggang Chen, Li Ran
Publikováno v:
IEEE Transactions on Power Electronics. 37:8830-8834
Autor:
Huaping Jiang, Li Ran, Hao Feng, Guanqun Qiu, Teng Long, Weihua Shao, Xu Hou, Andrew J. Forsyth
Publikováno v:
IEEE Transactions on Power Electronics. 37:3233-3246
A concern with the isolation transformer in a dual active bridge (DAB) dc–dc converter is the dc bias in magnetization. This article proposes a fluxgate-based current sensor to measure the dc component mixed with a large, high-frequency ac current.
Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses
Autor:
Hua Mao, Guanqun Qiu, Xiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Lei Tang, Yifu Zhang, Li Ran, Yuping Wu
Publikováno v:
IEEE Transactions on Electron Devices. 69:650-657
Publikováno v:
IEEE Transactions on Power Electronics. 36:11003-11008
Transformerless grid-connected inverters are widely applied due to their low cost and small volume. But the dc current injection (DCI) is one of the main problems that need to be solved. It is difficult to measure milliamperes dc current mixed in lar
Publikováno v:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Publikováno v:
2021 4th International Conference on Energy, Electrical and Power Engineering (CEEPE).
Silicon carbide (SiC) power MOSFETs are gradually being put into the market due to their superior performance, and their threshold voltage instability issues during long-term operation attract electrical engineer’s attention. In this conference, th