Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Guanping Wu"'
Publikováno v:
The clinical respiratory journalREFERENCES. 14(2)
Background During the bronchoscopy process, successful passage of the tracheoscope through the glottis can affect the following procedure of bronchoscopy. Therefore, safer, more effective and less painful anesthesia methods are particularly important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fea84bbba282ea234302478682e1c6f8
https://pubmed.ncbi.nlm.nih.gov/31746542
https://pubmed.ncbi.nlm.nih.gov/31746542
Autor:
GuanPing Wu
Publikováno v:
Beijing Film Academy Yearbook 2016 ISBN: 9781783208241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bab27a2debf19033cb8a7cd6701fd45
https://doi.org/10.2307/j.ctv36xw7nk.13
https://doi.org/10.2307/j.ctv36xw7nk.13
Autor:
Yan Liu, Jia Xu, Songlin Feng, Guanping Wu, Lei Wang, Chao Zhang, Zuoya Yang, Lianhong Wang, Bo Liu, Zhitang Song
Publikováno v:
IEEE Transactions on Electron Devices. 61:682-687
A cost-effective fabrication of Schottky-barrier (SB) diode steering element for low power phase-change memory (PCM) application is realized. While superior drivability in conventional PN diode array, SB diode array with 0.0193- μm2 (5F2), performin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24178bf34ce8e74a748bd58cd0adf850
https://doi.org/10.1109/ted.2013.2296591
https://doi.org/10.1109/ted.2013.2296591
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 27:38-42
To reduce the reset current for developing reliable high density phase change random access memory (PCRAM), small bottom electrode contact (BEC) size formation is a critical process. One of the failure mode for the process is the corrosion of tungste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e99e4c3aba4a500bcad431563ed258
https://doi.org/10.1109/tsm.2013.2295163
https://doi.org/10.1109/tsm.2013.2295163
Autor:
Bo Liu, Liangyong Wang, Yegang Lu, Songlin Feng, Zhitang Song, Weili Liu, Aodong He, Guanping Wu
Publikováno v:
Applied Surface Science. 283:304-308
In this paper, the in situ end-point detection (EPD) technique of Ge2Sb2Te5 (GST) chemical mechanical planarization (CMP) is investigated by the optical methods. It is shown that the intensity of optical reflectance for GST is much higher than that o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0ae344e7e52af34dfc9d983a84cfb0
https://doi.org/10.1016/j.apsusc.2013.06.106
https://doi.org/10.1016/j.apsusc.2013.06.106
Publikováno v:
ECS Transactions. 52:485-488
We report on GST(Ge2Sb2Te5) CMP process challenges and solutions in this paper. GST stain issue is solved through proper polish pad selection, process scheme and cleaning step optimization. The key factors to achieve minimum oxide loss are slurry dil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f919406e47e666edbe78a7b1dee1677b
https://doi.org/10.1149/05201.0485ecst
https://doi.org/10.1149/05201.0485ecst
Autor:
Guanping Wu, Zuoya Yang, Lianhong Wang, Chao Zhang, Zhitang Song, Yan Liu, Songlin Feng, Bo Liu
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:1186-1189
The application of three-step Epitaxial (EPI) process to dual trench epitaxial diode array for high density phase change random access memory (PCRAM) was reported in this paper. With three-step EPI process condition, both vertical and lateral Arsenic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b44bf836d3d6c1a9e1b760ee8c4f8b82
https://doi.org/10.1166/jnn.2013.6059
https://doi.org/10.1166/jnn.2013.6059
Autor:
Wanchun Ren, Qinqin Yu, Yanghui Xiang, Shuanglong Feng, Qi Ruijuan, Guanping Wu, Beichao Zhang, Xuezhen Jing, H. B. Xiao, Zhitang Song, Bo Liu, Jia Xu, Shuqing Duan
Publikováno v:
Applied Physics A. 112:999-1002
The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf68d023e7f634072c4f4951ad76912
https://doi.org/10.1007/s00339-012-7463-8
https://doi.org/10.1007/s00339-012-7463-8
Publikováno v:
SCIENTIA SINICA Informationis. 42:1509-1528
The technology development of micro-nano electronics in global IC industry is summarized and reviewed in the present paper. There are many challenges and opportunities as the innovative devices and materials have gradually been applied to IC manufact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932dfc384b842985921169562afb605f
https://doi.org/10.1360/112012-506
https://doi.org/10.1360/112012-506
Autor:
Zheng Li, Wenjie Kong, Xiufeng Han, Wenshan Zhan, Hanming Wu, Hai Helen Li, Guanping Wu, Yi Chen, Guo Peng, Jianying Qin, Lingling Wang, Xiuyuan Bi, Hong Zhang
Publikováno v:
ISLPED
Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d147a131ca054a7ce825c1d74ec29aee
https://doi.org/10.1145/2934583.2934611
https://doi.org/10.1145/2934583.2934611