Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Guanlin Du"'
Autor:
Xi Zhou, Liang Zhao, Chu Yan, Weili Zhen, Yinyue Lin, Le Li, Guanlin Du, Linfeng Lu, Shan-Ting Zhang, Zhichao Lu, Dongdong Li
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-
Externí odkaz:
https://doaj.org/article/35adebdd89cb4fe4afddad314824eb6b
Autor:
Yuanwei Jiang, Shuangying Cao, Linfeng Lu, Guanlin Du, Yinyue Lin, Jilei Wang, Liyou Yang, Wenqing Zhu, Dongdong Li
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline
Externí odkaz:
https://doaj.org/article/39320cb5b99d439da4397ba39d1e2f1c
Autor:
Guanlin Du, Le Li, Haiyin Zhu, Linfeng Lu, Xi Zhou, Zeyu Gu, Shan‐Ting Zhang, Xinbo Yang, Jilei Wang, Liyou Yang, Xiaoyuan Chen, Dongdong Li
Publikováno v:
EcoMat, Vol 4, Iss 3, Pp n/a-n/a (2022)
Abstract High work function vanadium oxide (V2OX, X
Externí odkaz:
https://doaj.org/article/ed160d9b1b59494ab4f8e3510c6a7e6f
Autor:
Le Li, Guanlin Du, Yinyue Lin, Xi Zhou, Zeyu Gu, Linfeng Lu, Wenzhu Liu, Jin Huang, Jilei Wang, Liyou Yang, Shan-Ting Zhang, Dongdong Li
Publikováno v:
Cell Reports Physical Science, Vol 2, Iss 12, Pp 100684- (2021)
Summary: Designing effective carrier-selective contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. Compared to doped silicon thin films, wide-band-gap transition metal oxides (TMOs) feature low parasitic absorption,
Externí odkaz:
https://doaj.org/article/da96012f85454d25a8e8e9b734a3d77d
Autor:
Dongdong Li, Yinyue Lin, Xingyu Gao, Yuanwei Jiang, Gang Li, Feng Qiang, Xi Zhou, Jilei Wang, Linfeng Lu, Liyou Yang, Guanlin Du, Le Li, Wei Zhang
Publikováno v:
ACS Applied Materials & Interfaces. 13:28415-28423
Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c406ff9341cc2f80e54f1b284e0cc8
https://doi.org/10.1021/acsami.1c08258
https://doi.org/10.1021/acsami.1c08258
Autor:
Xi Zhou, Liang Zhao, Chu Yan, Weili Zhen, Yinyue Lin, Le Li, Guanlin Du, Linfeng Lu, Shan-Ting Zhang, Zhichao Lu, Dongdong Li
As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von-Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-path curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ea36727073c6114d9bc1859741a093
https://doi.org/10.21203/rs.3.rs-1655986/v1
https://doi.org/10.21203/rs.3.rs-1655986/v1
Autor:
Le Li, Lei Ying, Yinyue Lin, Xiaodong Li, Xi Zhou, Guanlin Du, Yi Gao, Wenzhu Liu, Linfeng Lu, Jilei Wang, Liyou Yang, Shan‐Ting Zhang, Dongdong Li
Publikováno v:
Advanced Functional Materials. 32:2207158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0486761e0ec73e3716b48ec839929ad
https://doi.org/10.1002/adfm.202207158
https://doi.org/10.1002/adfm.202207158
Autor:
Le, Li, Guanlin, Du, Xi, Zhou, Yinyue, Lin, Yuanwei, Jiang, Xingyu, Gao, Linfeng, Lu, Gang, Li, Wei, Zhang, Qiang, Feng, Jilei, Wang, Liyou, Yang, Dongdong, Li
Publikováno v:
ACS applied materialsinterfaces. 13(24)
Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ecca54c1a18aac8e77ee00ccf159af85
https://pubmed.ncbi.nlm.nih.gov/34120440
https://pubmed.ncbi.nlm.nih.gov/34120440
Autor:
Liyou Yang, Yuanwei Jiang, Jilei Wang, Yinyue Lin, Shuangying Cao, Dongdong Li, Linfeng Lu, Guanlin Du, Wenqing Zhu
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-11 (2021)
Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e963f7175eea42538691d10535d1557e
https://doi.org/10.1186/s11671-021-03544-9
https://doi.org/10.1186/s11671-021-03544-9
Autor:
Yuanwei Jiang, Shuangying Cao, Linfeng Lu, Guanlin Du, Yinyue Lin, Jilei Wang, Liyou Yang, Zhu, Wenqing, Li, Dongdong
Additional file 1: Figure S1. Atomic force microscopy images of the MoOX thin films at different post-annealing temperatures. Figure S2. Green light (532 nm) Raman scattering intensity of polished Si surface and MoOX films. Figure S3. Si 2p XPS spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d6ec455b9d73159370f63bd0a3c1d98