Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Guangzheng Zhou"'
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 6, Pp 1-8 (2018)
The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quant
Externí odkaz:
https://doaj.org/article/01a59d86e90f43189ea875cf99f95c64
Publikováno v:
Particuology. 74:173-183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da45f18c71738a79c5d07471d34dfe0
https://doi.org/10.1016/j.partic.2022.07.002
https://doi.org/10.1016/j.partic.2022.07.002
Publikováno v:
IEEE Photonics Journal. 10:1-8
The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560083352b780d1e7cfdcff8a69c7f5c
https://doi.org/10.1109/jphot.2018.2878443
https://doi.org/10.1109/jphot.2018.2878443
Publikováno v:
Powder Technology. 336:415-425
The mixing of non-spherical particles is often encountered in various industrial fields, but its mechanism is not well understood. Because of the complexity of contact detection for non-spherical particles, most simulations on particle mixing using t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913a353cdc5068bef559b240bcbabea1
https://doi.org/10.1016/j.powtec.2018.05.040
https://doi.org/10.1016/j.powtec.2018.05.040
Autor:
Guangzheng Zhou, Xuesheng Liu, Rui Huang, Congcong Wang, Chong Li, Li Ying, Zhiyong Wang, Tian Lan, Jing Li
Publikováno v:
Eleventh International Conference on Information Optics and Photonics (CIOP 2019).
The band structure, density of states, optical properties, effective masses and loss function of AlxGa1−xAs and InyGa1−yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a46afba2f292cd6bab6171acf9bef5
https://doi.org/10.1117/12.2542227
https://doi.org/10.1117/12.2542227
Publikováno v:
Optical and Quantum Electronics. 51
AlxGa1−xAs is a main epitaxial material of 850-nm VCSEL. In order to analyze lattice match and heat production, the band gap of AlxGa1−xAs was built, using the first-principles calculation theory. In addition, based on thermoelectric coupling thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffec5188174ac95d43bd7c66ad44a7b
https://doi.org/10.1007/s11082-019-1909-6
https://doi.org/10.1007/s11082-019-1909-6
Publikováno v:
Gallium Nitride Materials and Devices XIV.
GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-know
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89b2ce124009fb9048c30bf2b508bd1d
https://doi.org/10.1117/12.2502649
https://doi.org/10.1117/12.2502649
Publikováno v:
Particuology. 29:95-102
The mixing performance of a multi-bladed baffle inserted into a traditional Gallay tote blender is explored by graphic processing unit-based discrete element method software. The mixing patterns and rates are investigated for a binary mixture, repres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913b121c7d0f1fab44e1e34355117574
https://doi.org/10.1016/j.partic.2016.01.008
https://doi.org/10.1016/j.partic.2016.01.008
Autor:
Zhaochen Lv, Zhiyong Wang, Tian Lan, Xuesheng Liu, Li Ying, Hongyan Yu, Guangzheng Zhou, Luguang Lang
Publikováno v:
Tenth International Conference on Information Optics and Photonics.
Reliability and characterization of 850 nm 50 Gbit/s PAM-4 vertical-cavity surface-emitting lasers (VCSELs) are presented. These VCSELs have demonstrated a threshold current of 0.8 mA and a slope efficiency of 0.95 W/A. The maximum optical output pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1bfc327d443a78bffa5c22a09504b70
https://doi.org/10.1117/12.2504064
https://doi.org/10.1117/12.2504064
Publikováno v:
Optical and Quantum Electronics. 50
The influence of curvature variation on the crystallinity and luminescence of GaN-based blue laser diode (LD) structure is comprehensively investigated during the growth of InGaN/GaN active layers. Compared with InGaN/GaN multiple quantum well (MQWs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4944a69f11aa1e577369dc0ff5beb769
https://doi.org/10.1007/s11082-018-1689-4
https://doi.org/10.1007/s11082-018-1689-4