Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Guangxing Wan"'
Autor:
Xiaojin Li, Yabin Sun, Zhen Zhou, Lijie Sun, Guangxing Wan, Waisum Wong, Mengying Zhang, Yanling Shi
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
In this work, we propose a novel RC tightened corner test structure for FinFET Technology. In this test structure, Parasitic RC DUTs (Design Under Test) integrated into RO (Ring Oscillator) have been designed to verify and calibrate MEOL (Mid-End-Of-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2110e18a8197e1d63df62a86c3918362
https://doi.org/10.1109/icsict49897.2020.9278392
https://doi.org/10.1109/icsict49897.2020.9278392
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:M79-M82
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de791fde2b2e0adf4e9921a2718dc3b5
https://doi.org/10.1149/2.0211707jss
https://doi.org/10.1149/2.0211707jss
Autor:
Lingli Jiang, Shuxiang Zhang, Guangxing Wan, Huilong Zhu, Bo Tang, Hongyu Yu, Jiang Yan, Chao Zhao, Tianli Duan
Publikováno v:
IEEE Electron Device Letters. 36:1267-1270
Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT $\sim 0.8$ nm) high- $\kappa $ layer is investigated, which reveals that overshoot is of great importance to high- $\kappa $ layer leakage degradation. The dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fd698a4324c8bf6afd9e4a921dedf1
https://doi.org/10.1109/led.2015.2490719
https://doi.org/10.1109/led.2015.2490719
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this work, a novel RC tightened corner modeling methodology using statistical simulation is proposed for the advanced FinFET technology. Based on foundries’ parasitic RC techfile, MEOL (Middle-End-Of- Line) and BEOL (Back-End-Of-Line) parasitic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00b722e9fb917b71d880113c6a227821
https://doi.org/10.1109/icsict.2018.8564960
https://doi.org/10.1109/icsict.2018.8564960
Autor:
Guangxing Wan, Bo Tang, Tianli Duan, Huilong Zhu, Chao Zhao, Hongyu Yu, Lingli Jiang, Shuxiang Zhang
Publikováno v:
ASICON
Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT∼0.8 nm) high-κ layer are investigated, which reveals that overshoot is of great concern to high-κ layer lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed49fa685eeb3ccdd716896c5c8cbf4
https://doi.org/10.1109/asicon.2015.7516943
https://doi.org/10.1109/asicon.2015.7516943
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 7, pM79-M82, 4p
Autor:
Wan, Guangxing, Duan, Tianli, Zhang, Shuxiang, Jiang, Lingli, Tang, Bo, Yan, J., Zhao, Chao, Zhu, Huilong, Yu, HongYu
Publikováno v:
IEEE Electron Device Letters; Dec2015, Vol. 36 Issue 12, p1267-1270, 4p
Publikováno v:
China Journal of Chinese Materia Medica; 2010, Vol. 35 Issue 4, p515-520, 6p