Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Guanguang Zhang"'
Autor:
Sifan Kong, Guanguang Zhang, Muyun Li, Rihui Yao, Chenxiao Guo, Honglong Ning, Jianzhi Zhang, Ruiqiang Tao, Haoyang Yan, Xubing Lu
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1345 (2022)
Even though electrochromism has been around for more than 50 years, it still has several issues. Multi-layered films, high manufacturing costs, and a short lifetime are present in existing electrochromic devices. We demonstrate a unique high-performa
Externí odkaz:
https://doaj.org/article/b42267f82bc24182b39f352cabd039ae
Autor:
Kuankuan Lu, Rihui Yao, Wei Xu, Honglong Ning, Xu Zhang, Guanguang Zhang, Yilin Li, Jinyao Zhong, Yuexin Yang, Junbiao Peng
Publikováno v:
Research, Vol 2021 (2021)
Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-dope
Externí odkaz:
https://doaj.org/article/1d4a9314d7724320a8f883643bbea45a
Autor:
Hongfu Liang, Rihui Yao, Guanguang Zhang, Xu Zhang, Zhihao Liang, Yuexin Yang, Honglong Ning, Jinyao Zhong, Tian Qiu, Junbiao Peng
Publikováno v:
Membranes, Vol 12, Iss 2, p 141 (2022)
Over the past few decades, electrohydrodynamic (EHD) printing has proved to be an environmentally friendly, cost-effective and powerful tool in manufacturing electronic devices with a wire width of less than 50 μm. In particular, EHD printing is hig
Externí odkaz:
https://doaj.org/article/5f5f2079253140ecb6b6a2041ef75b6a
Autor:
Muyang Shi, Tian Qiu, Biao Tang, Guanguang Zhang, Rihui Yao, Wei Xu, Junlong Chen, Xiao Fu, Honglong Ning, Junbiao Peng
Publikováno v:
Micromachines, Vol 12, Iss 1, p 80 (2021)
Nickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier t
Externí odkaz:
https://doaj.org/article/a6398000c0fe44eaac44465ca6a5ddc0
Autor:
Jinxiang Liu, Guanguang Zhang, Kaiyue Guo, Dong Guo, Muyang Shi, Honglong Ning, Tian Qiu, Junlong Chen, Xiao Fu, Rihui Yao, Junbiao Peng
Publikováno v:
Micromachines, Vol 11, Iss 3, p 311 (2020)
Tungsten trioxide (WO3) is a wide band gap semiconductor material, which is commonly not only used, but also investigated as a significant electrochromic layer in electrochromic devices. WO3 films have been prepared by inorganic and sol-gel free ammo
Externí odkaz:
https://doaj.org/article/b5384ee0df544fd3ba8fe8029e357305
Autor:
Guanguang Zhang, Kuankuan Lu, Xiaochen Zhang, Weijian Yuan, Muyang Shi, Honglong Ning, Ruiqiang Tao, Xianzhe Liu, Rihui Yao, Junbiao Peng
Publikováno v:
Micromachines, Vol 9, Iss 8, p 377 (2018)
Tungsten trioxide (WO3) is a wide band gap semiconductor material that is used as an important electrochromic layer in electrochromic devices. In this work, the effects of the annealing temperature on the optical band gap of sol-gel WO3 films were in
Externí odkaz:
https://doaj.org/article/1061f7007ba64bd79affb1b6fe529c08
Autor:
Rihui Yao, Muyang Shi, Guanguang Zhang, Wenxin Zou, Chenxiao Guo, Zhenyu Wu, Kangping Zhang, Yasi Jiang, Honglong Ning, Junbiao Peng
Publikováno v:
SID Symposium Digest of Technical Papers. 53:357-358
Autor:
Wanjun Yan, Guanguang Zhang, Rihui Yao, Wei Xu, Muyun Li, Xinglin Li, Jinyao Zhong, Taijiang Liu, Xiaoqin Wei, Honglong Ning
Publikováno v:
Surfaces and Interfaces. 33:102238
Autor:
Guanguang, Zhang, Kaiyue, Guo, Xingxing, Shen, Honglong, Ning, Hongfu, Liang, Jinyao, Zhong, Wei, Xu, Biao, Tang, Rihui, Yao, Junbiao, Peng
Publikováno v:
ACS applied materialsinterfaces. 13(3)
Tungsten oxide (WO
Publikováno v:
Exercise Biochemistry Review. 1
Objective Post-traumatic Stress Disorder (PTSD) occurs in people who suffers reparative shocking, scary, or dangerous event. Evidences demonstrate that PTSD is associated with cognitive decline and depression. In the general population, women tend to