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pro vyhledávání: '"Guangshan Ren"'
Autor:
Fubin Zhou, Huolin Huang, Zhuang Liang, Ren Yongshuo, Liang Huinan, Wang Ronghua, Cheng Wanxi, Feiyu Li, Guangshan Ren
Publikováno v:
Journal of Physics D: Applied Physics. 54:265106
Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are applied to investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0f3d939ed0c3d2db7522d1b356900a
https://doi.org/10.1088/1361-6463/abf44b
https://doi.org/10.1088/1361-6463/abf44b
