Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Guangrui Maggie Xia"'
Autor:
Jia Guo, Yunlong Zhao, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui (Maggie) Xia
Publikováno v:
Optical Materials Express. 13:1077
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf9dcb9af6b6fdb87678dcc9170d72e
https://doi.org/10.1364/ome.484840
https://doi.org/10.1364/ome.484840
Publikováno v:
Journal of Applied Physics. 133:075703
Heteroepitaxial semiconductors such as Ge-on-Si are widely used in current opto-electronic and electronic applications, and one of the most important challenges for epitaxial Ge-on-Si is threading dislocations (TDs) in Ge layers caused by lattice mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026323383e14cee34da0213460798cb2
https://doi.org/10.1063/5.0133765
https://doi.org/10.1063/5.0133765
Publikováno v:
IEEE Transactions on Nanotechnology. 18:37-41
We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54d8cd393549178ded2b076b0e2ec00d
https://doi.org/10.1109/tnano.2018.2877524
https://doi.org/10.1109/tnano.2018.2877524
Autor:
Yunlong Zhao, Jia Guo, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Liming Wang, Lukas Chrostowski, David Lackner, Chao-Hsin Wu, Guangrui (Maggie) Xia
Publikováno v:
Optical Materials Express. 12:1131
High quality 940 nm AlxGa1-xAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bf9b0f3cd1ee05af1a771da291d6ec
https://doi.org/10.1364/ome.452161
https://doi.org/10.1364/ome.452161
Autor:
Wei-Chih Cheng, Siqi Lei, Hongyu Yu, Robert Sokolovskij, Zeyu Wan, Jingyi Wu, Qing Wang, Yang Jiang, Guangrui Maggie Xia, Guangnan Zhou
Publikováno v:
ASICON
Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O 2 -plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::948696149a40efcf8ff56f9f696e2930
https://doi.org/10.1109/asicon47005.2019.8983678
https://doi.org/10.1109/asicon47005.2019.8983678
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper reports the successful atomic layer patterning of 2-dimensional Black Phosphorus (BP) and the simulation of the etching process by Density Functional Theory (DFT) method. The wet etching process can etch selected regions of few-layer black
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cede7e419538faf9610ade4d33d5437e
https://doi.org/10.1109/sispad.2019.8870363
https://doi.org/10.1109/sispad.2019.8870363
Autor:
Mansun Chan, Siqi Lei, Hongyu Yu, Tao Fang, Minghao He, Feng Zhao, Yunlong Zhao, Guangrui Maggie Xia, Wei-Chih Cheng
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
Due to the piezoelectric nature of GaN, the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) could be engineered by strain. In this work, SiN x deposited using dual-frequency plasma-enhanced chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9f00ad295a25ea0a60fb9552d41fe8
https://doi.org/10.1109/edssc.2019.8754212
https://doi.org/10.1109/edssc.2019.8754212
Autor:
Wei-Chih Cheng, Jingyi Wu, Hongyu Yu, Qing Wang, Siqi Lei, Robert Sokolovskij, Guangrui Maggie Xia
Publikováno v:
Journal of Vacuum Science & Technology A. 37:060401
O2 plasma-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated using an inductively coupled plasma etcher. Silicon oxide layer was used as the hard mask. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140b29d492a67fc1bf330c5248be071d
https://doi.org/10.1116/1.5115427
https://doi.org/10.1116/1.5115427
Publikováno v:
Thin Solid Films. 594:172-177
A classic molecular dynamic melting and cooling approach was used to generate bulk amorphous ZrO 2 using a reactive force field. The density and the structure characteristics of the generated bulk ZrO 2 were analyzed and compared with literature simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39548a195c3a99dbbedb4b20b901142
https://doi.org/10.1016/j.tsf.2015.10.026
https://doi.org/10.1016/j.tsf.2015.10.026
Autor:
Yiheng Lin, Yasuda, Hiroshi, Schiekofer, Manfred, Benna, Bernhard, Wise, Rick, Guangrui (Maggie) Xia
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 14, p1-9, 9p, 2 Diagrams, 1 Chart, 8 Graphs