Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Guangmiao Wan"'
Publikováno v:
Semiconductor Science and Technology. 38:035006
In this work, nanocrystalline silicon (nc-Si) films were achieved by using normally processing method of amorphous silica thin film transistors (a-Si TFTs), plasma enhanced chemical vapor deposition (PECVD). The effects of PECVD process parameters on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34e6b3aaeda25adadf35c88eaf35c73
https://doi.org/10.1088/1361-6641/acb2e8
https://doi.org/10.1088/1361-6641/acb2e8
Publikováno v:
Thin Solid Films. 685:145-150
The chemical bath deposition process of depositing CdS buffer layer was replaced with electron-beam evaporation method, full vacuum preparation process, which is more environmentally friendly and non-solution contact, was achieved to prepare Cu2ZnSnS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88d3e7c8fbcdabca7ff802130a6c4519
https://doi.org/10.1016/j.tsf.2019.06.017
https://doi.org/10.1016/j.tsf.2019.06.017
Publikováno v:
Journal of Luminescence. 205:243-247
Nowadays, though blue and green GaN-based light-emitting diodes (LEDs) are already successfully commercialized, full-color displays via GaN-based LEDs are difficult to realize due to the low output power of red GaN-based LEDs. Hence, highly efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554b46a1aa883da7541cf327b8771d6e
https://doi.org/10.1016/j.jlumin.2018.09.026
https://doi.org/10.1016/j.jlumin.2018.09.026
Publikováno v:
2020 IEEE 3rd International Conference on Electronics Technology (ICET).
In order to solve the issue of poor gate signal transmission in display panels based on InGaZnO thin film transistors, the panels were disassembled and analyzed. The poor transmissions of the gate signal results from the drain current drop phenomenon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa26919efc88c90cdc1ec304fd49d1c0
https://doi.org/10.1109/icet49382.2020.9119637
https://doi.org/10.1109/icet49382.2020.9119637
Publikováno v:
Journal of Materials Science. 53:13949-13954
In this work, heterojunction light-emitting diodes made of Tb2O3 and poly(3,4-ethylene-dioxythiophene)–poly(styrene-sulfonate) (PEDOT:PSS) were prepared and the effect of PEDOT:PSS films on performance of the electroluminescence devices was studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb9c8f2d31ba3da2e9d47bfb28d776b
https://doi.org/10.1007/s10853-018-2602-z
https://doi.org/10.1007/s10853-018-2602-z
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:7213-7219
Rare earth (RE) -doped ZnO electroluminescence is worthy of investigation for phosphor-free white light-emitting diodes (LEDs) due to their pure and sharp emissions. Whereas, the low solubility of RE ions in ZnO films is found to hinder the performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0af3a059ee922d1d23f78c7b7c61a53
https://doi.org/10.1007/s10854-018-8709-9
https://doi.org/10.1007/s10854-018-8709-9
Publikováno v:
Journal of Alloys and Compounds. 726:707-711
Nanostructured ZnSe/ZnS multilayer thin films with excellent blue light emission were prepared using the electron beam evaporation technique. The structures and crystallization of the nanostructured ZnSe/ZnS multilayer thin films were studied by X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef1a4ffe08a312fe3a69c1adf200769
https://doi.org/10.1016/j.jallcom.2017.08.036
https://doi.org/10.1016/j.jallcom.2017.08.036
Publikováno v:
Thin Solid Films. 634:51-55
In this work, zinc oxide (ZnO) thin films were synthesized by thermal oxidation of zinc selenide films in oxygen atmosphere without introducing any catalysts or additives. According to the X-ray diffraction and morphology analysis, the ZnO films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578ae5b1ca9f3812343e8aed52ef4c8b
https://doi.org/10.1016/j.tsf.2017.05.012
https://doi.org/10.1016/j.tsf.2017.05.012
Publikováno v:
Journal of Alloys and Compounds. 701:549-553
In this work, rutile titanium dioxide (TiO 2 ) films were prepared on quartz and SiO 2 /Si substrates utilizing RF magnetron reactive sputtering technology. Crystal structure, surface morphology and optical property of these films were characterized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e446e8fc545a284e577bcc76fd7cf019
https://doi.org/10.1016/j.jallcom.2017.01.146
https://doi.org/10.1016/j.jallcom.2017.01.146
Publikováno v:
Journal of Alloys and Compounds. 664:690-694
CeO2:Er3+ films were deposited by electron-beam evaporation technique. Photoluminescence properties of Er3+ doped CeO2 films annealed in air atmosphere were investigated. Visible and near-infrared emission peaks were assigned to the transitions from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341abd548905226682bf2c312b714b4d
https://doi.org/10.1016/j.jallcom.2016.01.020
https://doi.org/10.1016/j.jallcom.2016.01.020