Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Guanglin Kong"'
Publikováno v:
physica status solidi c. 7:666-669
The effect of light soaking on photoconductivity and DC CPM absorption spectra in hydrogenated silicon films with mixed amorphous-nanocrystalline structure studied. A series of biphase silicon films were deposited using very high frequency plasma-enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af25130310bd3e51577c68b6b896e803
https://doi.org/10.1002/pssc.200982679
https://doi.org/10.1002/pssc.200982679
Publikováno v:
Journal of Non-Crystalline Solids. 354:2282-2285
The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffff5c64e3e86d8ff7736e78e4204088
https://doi.org/10.1016/j.jnoncrysol.2007.09.016
https://doi.org/10.1016/j.jnoncrysol.2007.09.016
Autor:
Isabel M.P.L.V.O. Ferreira, Elvira Fortunato, Hugo Águas, Guanglin Kong, Xia-Xia Liao, Shibin Zhang, Rodrigo Martins, Yuelong Xu, Leandro Raniero
Publikováno v:
Solar Energy Materials and Solar Cells. 90:3001-3008
Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5d8ca8571c87002a34aa98a1bc8440
https://doi.org/10.1016/j.solmat.2006.06.006
https://doi.org/10.1016/j.solmat.2006.06.006
Publikováno v:
Journal of Non-Crystalline Solids. 352:1904-1908
A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b22d1a461f9a516eabfc9d0d465543e
https://doi.org/10.1016/j.jnoncrysol.2005.12.031
https://doi.org/10.1016/j.jnoncrysol.2005.12.031
Publikováno v:
Thin Solid Films. 497:157-162
In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c829667827378cbacc27f37f36651e6f
https://doi.org/10.1016/j.tsf.2005.10.069
https://doi.org/10.1016/j.tsf.2005.10.069
Publikováno v:
Journal of Crystal Growth. 281:344-348
A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e133acbe018e1e47cc4fafa255ef69
https://doi.org/10.1016/j.jcrysgro.2005.04.067
https://doi.org/10.1016/j.jcrysgro.2005.04.067
Publikováno v:
Journal of Non-Crystalline Solids. :188-191
A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce31d1771202abaa72d4fdaf1644e64
https://doi.org/10.1016/j.jnoncrysol.2004.02.050
https://doi.org/10.1016/j.jnoncrysol.2004.02.050
Autor:
Guanglin Kong, Rodrigo Martins, Xia Zeng, Elvira Fortunato, Zhang Shuo, Zhuang Qi Hu, Xia-Xia Liao, Y. Xu
Publikováno v:
Materials Science Forum. :77-80
Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82badf517e937249f62c1270ad17778c
https://doi.org/10.4028/www.scientific.net/msf.455-456.77
https://doi.org/10.4028/www.scientific.net/msf.455-456.77
Publikováno v:
Journal of Crystal Growth. 264:7-12
This paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma. Carbon-rich a-SiC:H film with band gap of up to 3.3 eV has been achieved. IR and UV Vis spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58dc1aff2f67e2a5bc58320bc6ce735
https://doi.org/10.1016/j.jcrysgro.2003.12.013
https://doi.org/10.1016/j.jcrysgro.2003.12.013
Publikováno v:
Journal of Crystal Growth. 256:27-32
Hydrogenated silicon (Si:H) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a wide range of hydrogen dilution R-H = [H-2]/[SiH4] values of 2-100. The effects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cbb341ce935f8820f003cf9017a46f4
https://doi.org/10.1016/s0022-0248(03)01342-3
https://doi.org/10.1016/s0022-0248(03)01342-3