Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Guangjie Gao"'
Autor:
Yong Yang, Bo Deng, Hao Shen, Xinyu Liu, Huan Chang, Zhengyao Hou, Guangjie Gao, Mengting Li, Linke Zou, Jinqi Li, Xingwei Wu
Publikováno v:
BMJ Open, Vol 14, Iss 11 (2024)
Introduction Accurate identification of the risk factors is essential for the effective prevention of hyperuricaemia (HUA)-related kidney damage. Previous studies have established the efficacy of machine learning (ML) methodologies in predicting kidn
Externí odkaz:
https://doaj.org/article/1fe0454d3b2f4c5dbeb63fe735637721
Autor:
Xuewu Song, Yitong Tong, Yi Luo, Huan Chang, Guangjie Gao, Ziyi Dong, Xingwei Wu, Rongsheng Tong
Publikováno v:
Frontiers in Cardiovascular Medicine, Vol 10 (2023)
BackgroundShort-term unplanned readmission is always neglected, especially for elderly patients with coronary heart disease (CHD). However, tools to predict unplanned readmission are lacking. This study aimed to establish the most effective predictiv
Externí odkaz:
https://doaj.org/article/6bd52fa2742943b8840ee1ce59af4a56
Autor:
Zhen Zhang, Huijuan Hou, Guangjie Gao, Ganlin Zu, Yuxiong Wang, Qiang Jin, Zongyuan Chen, Wangsuo Wu, Zhijun Guo
Publikováno v:
Journal of Radioanalytical and Nuclear Chemistry. 332:1181-1191
Publikováno v:
ICASSP 2023 - 2023 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP).
Autor:
Hanghai Du, Zhihong Liu, Tao Zhang, Lu Hao, Guangjie Gao, Weichuan Xing, Jincheng Zhang, Yue Hao
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Proceedings of the 8th International Conference on Robotics and Artificial Intelligence.
Autor:
Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao
Publikováno v:
Applied Physics Letters. 122:152107
In this Letter, we demonstrated deep sub-60 mV/dec subthreshold swings ( SS) independent of gate bias sweep direction in GaN-based metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) with an Al0.6Ga0.4N/GaN heterostructure
Autor:
Guangjie Gao
Publikováno v:
International Journal of Electrochemical Science. :1426-1436
Autor:
Liangguo He, Kun Li, Yi Yan, Yong Wang, Feiyun Xiao, Xinfang Ge, Guangjie Gao, Zengxiang Shan, Haotian Dou
Publikováno v:
Smart Materials and Structures. 31:095026
A resonant-type inertial impact linear piezoelectric motor based on coupling of driving and clamping parts was designed and manufactured. The motor mainly includes stator (coupling of driving and clamping parts), mover (slider) and auxiliary parts. T
Publikováno v:
Review of Scientific Instruments. 93:035004
A resonant-type rotating piezoelectric motor with inchworm–inertia composite impact was designed and manufactured. It mainly comprises a stator, rotor, support shaft, and frame. The motor stator includes a clamp, driver, central connecting block, p