Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Guanghui Xing"'
Autor:
Molin Li, Lin Shi, Xianghui Chen, Dan Yi, Yufei Ding, Jian Chen, Guanghui Xing, Siming Chen, Li Wang, Yongyi Zhang, Yaqiong Zhu, Yuexiang Wang
Publikováno v:
Communications Biology, Vol 7, Iss 1, Pp 1-15 (2024)
Abstract Although platelet-rich plasma-derived exosomes (PRP-Exos) hold significant repair potential, their efficacy in treating rotator cuff tear (RCT) remains unknown. In light of the potential for clinical translation of fibrin gel and PRP-Exos, w
Externí odkaz:
https://doaj.org/article/855365728839490793d7113d112870fc
Autor:
Chenyu Liu, Guanghui Xing
Publikováno v:
2022 IEEE 4th International Conference on Civil Aviation Safety and Information Technology (ICCASIT).
Publikováno v:
ICRAI
Autor:
Hongyun Xie, Chunbao Ding, Pei Shen, Yujie Zhang, Liang Chen, Guanghui Xing, Wanrong Zhang, Zhiyi Lu, Zhengjie Guo
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
A Cascode SiGe BiCMOS low-noise amplifier (LNA) is presented for ultra-wideband (UWB) application. The emitter degenerative inductive technique is employed to achieve input impedance matching and optimize the noise performance. The output impedance m
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
To solve the existing problems such as lower quality factor and inductance value in common active inductor, a novel cascode-grounded active inductor circuit topology was proposed. The R f is added and the RC feedback cascode positive feedback is form
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
This paper presents a dual band LNA with 0.35μm SiGe HBT for two standards which can operate at GSM 0.9GHz and WLAN 2.4GHz. Inductor degeneration in emitter is introduced to decouple the noise factor from the input impedance. Current reuse topology
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
The thermal-electrical characteristics of SiGe HBTs with three kinds of Ge profiles (box, trapezoidal and triangular) in the base are investigated in this paper. The results show that SiGe HBTs with trapezoidal and triangular Ge-profile could improve
Publikováno v:
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT).
In this paper, an ultra-wideband (3.1∼10.6GHz) active variable attenuator is designed. Π-attenuator circuit topology and SiGe HBTs active devices are employed to achieve high gain dynamic range. LC series negative feedback at emitter is used to ac
Autor:
Huo Wenjuan, Zhiyi Lu, Wanrong Zhang, Zhenjie Guo, Liang Chen, Chunbao Ding, Hongyun Xie, Guanghui Xing, Yujie Zhang
Publikováno v:
2011 IEEE International Conference of Electron Devices and Solid-State Circuits.
This paper presents a general methodology to design a LNA with current reuse topology for two standards which can operate at mobile band of 1.8GHz and WLAN band of 5.2GHz. A novel current reuse topology is proposed to reduce the power consumption and