Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Guang-Tsai Lei"'
Autor:
GUANG-TSAI LEI1 leiguangtsai@aol.com
Publikováno v:
SIAM Journal on Mathematical Analysis. 2010, Vol. 42 Issue 2, p634-645. 12p.
Autor:
Guang-Tsai Lei
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:803-815
In this paper, we examine the Green's function and Z-matrix models commonly used in calculations for microwave planar circuits. We prove, for the first time, the pointwise convergence of the Green's function and the interchangeability of the integrat
Autor:
Guang-Tsai Lei
Publikováno v:
IEEE Microwave and Wireless Components Letters. 20:363-365
In this letter, we propose an efficient and simple approach to computing the Green's function for the rectangular cavity. By splitting the Fourier series representing the Green's function and by utilizing the analytical formula, we will show that our
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:562-569
In this paper, we describe a strategy to characterize power and ground-plane structures using a full cavity-mode frequency-domain resonator model. We develop insights into modal analysis and introduce a novel technique to suppress modal impedances, m
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:1955-1960
A new high-order-mode analytical method is described for calculating the frequency-dependent complex permittivity of a low-loss dielectric in a parallel-plate structure using a planar microwave circuit model. An analytical expression for the complex
Autor:
Guang-Tsai Lei, Guang-Wen (George) Pan
Publikováno v:
Hokkaido Math. J. 42, no. 3 (2013), 425-443
In this paper we derive boundary integral identities for the bi-Laplacian eigenvalue problems under Dirichlet, Navier and simply-supported boundary conditions. By using these integral identities, we prove that the first eigenvalue of the eigenvalue p
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 19:621-627
The worldwide CMOS integrated circuits industry relies on heavily doped silicon wafers as the starting material for chip fabrication; the resulting integrated circuits are confined to the upper few microns of the wafer, which itself is as much as 600
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 44:300-303
In this paper, we describe the development of a theoretical field-based or "wave" model which we are employing in an attempt to characterize the ground/power plane (e.g., the V/sub cc/ plane) structure of a printed wiring board (PWB) or multichip mod
Autor:
Guang-Tsai Lei
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
This paper presents a new method to suppress the power/ground (P/G) plane noise commonly encountered in high-speed digital and mixed-signal systems. This method is based on modifying the conventional power/ground cavity model by utilizing the inhomog
Publikováno v:
Electrical Performance of Electronic Packaging.