Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Guang Pu Wei"'
Publikováno v:
Advanced Materials Research. 321:92-95
In this paper, a newly porterage robot as a manufacturing equipment of crystal silicon solar cell was introduced. Some problems in the modern solar cell manufacturing equipments were analyzed. Some key techniques, such as robot construction, methods
Publikováno v:
Advanced Materials Research. :1779-1783
This paper investigates a combination of Ni acetate solution induced crystallization and microwave induced crystallization of a-Si thin film. Ni acetate solution was coated over amorphous Si thin film for evenly spread of Ni metal source. The Ni indu
Autor:
Wan-Tao Yu, Guang-Pu Wei
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
Co-diffusion processing is emerging as a promising simplified process for manufacture of terrestrial back surface field (BSF) solar cells. In this work, we present results about co-diffusion of two dopant elements (phosphorus and boron) in a single t
Publikováno v:
Third International Conference on Thin Film Physics and Applications.
The growth mechanism of diamond films from low pressure vapor phase synthesis cannot be illustrated with classical thermodynamic theory. Up to now, a lot of growth methods were reported, but the growth mechanism was not so clear. In this paper, a var
Publikováno v:
SPIE Proceedings.
Porous silicon was prepared by the anodization of p/p+ epitaxial c-Si wafer. Its structure was examined by electron microscopy, Raman spectrum and infrared spectrum. The results of examination show the porous Si consists of many nano-scale pores and
Autor:
Guang-Pu Wei
Publikováno v:
International Conference on Thin Film Physics and Applications.
Three kinds of amorphous silicon x-ray sensors have been developed. The structures together with some basic characteristics of these sensors are reported. As an example of application, some operational tests for x-ray computed tomography (XCT) have b
Autor:
Guang-Pu, Wei
Publikováno v:
AIP Conference Proceedings; Jun1999, Vol. 475 Issue 1, p866-869, 4p
Autor:
Taneo Nishino, Takashi Kita, Yoshihiro Hamakawa, Hiroaki Okamoto, Guang-Pu Wei, Wenbiao Wu, Hiroshi Nakayama, Wen Ma, Masanori Okuyama
Publikováno v:
Japanese Journal of Applied Physics. 35:5342
With full utilization of the low-temperature process of hydrogenated amorphous silicon (a-Si) thin-film deposition and long carrier lifetime of high-purity crystalline silicon (c-Si) , we have developed a new type of a-Si/c-Si double heterojunction X
Autor:
Guang-pu Wei, Guang-pu Wei, Wen-biao Wu, Wen-biao Wu, Takashi Kita, Takashi Kita, Hiroshi Nakayama, Hiroshi Nakayama, Taneo Nishino, Taneo Nishino, Wen Ma, Wen Ma, Hiroaki Okamoto, Hiroaki Okamoto, Masanori Okuyama, Masanori Okuyama, Yoshihiro Hamakawa, Yoshihiro Hamakawa
Publikováno v:
Japanese Journal of Applied Physics; October 1996, Vol. 35 Issue: 10 p5342-5342, 1p
Publikováno v:
In Solar Energy Materials and Solar Cells 1994 35:319-324