Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Guang Di Shen"'
Autor:
Yinghua Sun, Guang-di Shen, Wanrong Zhang, Yao-hai Cheng, Zhiguo Li, Fu-chen Mu, Jian-xin Chen
Publikováno v:
Solid-State Electronics. 45:1183-1187
A rapid evaluation method, temperature ramp method, for GaAs MESFETs ohmic contacts is proposed, and an automatic evaluation system has been developed. By use of this method and system, activation energy for ohmic contacts degradation can be obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa6bfcdd2679dea16c90e7afa886862
https://doi.org/10.1016/s0038-1101(01)00146-0
https://doi.org/10.1016/s0038-1101(01)00146-0
Autor:
Guang Di Shen, Li Xin Zhao
Publikováno v:
Solid-State Electronics. 43:937-941
In this paper, the microwave performances of SiGe/Si heterojunction bipolar transistors (HBTs) and its amplifier have been analyzed and simulated based on a physical model considering the following influences. They are (1) the emitter and collector d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492936539d2d678e14915a7bbcc4bd9e
https://doi.org/10.1016/s0038-1101(99)00004-0
https://doi.org/10.1016/s0038-1101(99)00004-0
Publikováno v:
Optoelectronics Letters. 1:37-39
A novel kind of multi-quantum well infrared photodetector (QWIP) is presented. In the new structure device, a p-type contact layer has been grown on the top of the conventional structure of QWIP, then a small tunneling current is instead of the large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9419af9d4ee509c3c42bad95b5045c09
https://doi.org/10.1007/bf03033612
https://doi.org/10.1007/bf03033612
Autor:
Kang L. Wang, Guang Di Shen, Jin Yu Du, Guo Gao, Ralph Heiderhoff, Teck Hock Lee, Xue Zhong Wang, Ludwig Josef Balk, De Shu Zou, Yuan Ji, Xia Guo, Guo Hong Wang
Publikováno v:
Applied Physics Letters. 82:4417-4419
The thermal property of tunnel-regenerated multiactive-region (TRMAR) light-emitting diodes (LEDs) is studied in detail in this letter. These devices have the advantages of high quantum efficiency and high output optical power. To obtain the same out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ff22249b8c7ecddbbb78f6fc349703
https://doi.org/10.1063/1.1583134
https://doi.org/10.1063/1.1583134
Publikováno v:
Semiconductor Lasers and Applications V.
Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al 0.8 Ga 0.2 As defect layer in 1D photonic crystal structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1a99aefde467ff8ac5aa99955b3a6e
https://doi.org/10.1117/12.979656
https://doi.org/10.1117/12.979656
Autor:
Hong Da Chen, Chun Xia Wang, Chen Xu, Ying Ming Liu, Qiang Kan, Yi Yang Xie, Guang Di Shen, Bao Qiang Wang
Publikováno v:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems.
In this paper, we report the single mode operation of PC-VCSEL. The PC- VCSEL is similar to standard VCSEL except that it has photonic crystal defined by holes in the top distributed Bragg reflector. The two-dimensional photonic crystal (2-D PhC) str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082cae8eefb17d7b4852c3215dbd32c0
https://doi.org/10.1117/12.867912
https://doi.org/10.1117/12.867912
Publikováno v:
SPIE Proceedings.
In this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl 2 /C 2 H 4 /Ar as the etching gases. The etch rates were studied as a function of RF power, inductively coupled plasma (ICP) source power, wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e6f59c8c034c2089f2aee5dad8ca1f
https://doi.org/10.1117/12.850056
https://doi.org/10.1117/12.850056
Publikováno v:
SPIE Proceedings.
A Monte Carlo ray tracing method is applied to analyze the light extraction characteristics of AlGaInP based LED with various shapes of surface texture. Regular, periodic arranged structures were fabricated on p-side-up AlGaInP LEDs through dry etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f01c056e26ef8948a71a2c17ed085c7
https://doi.org/10.1117/12.849978
https://doi.org/10.1117/12.849978
Publikováno v:
Asia Communications and Photonics Conference and Exhibition.
A trichromatic phosphor-free white light-emitting diode (LED) has been implemented by using adhesive bonding scheme. The device has been operated as a three-terminal device with independent electrical control of an AlGaInP-based red LED chip and a Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3d5816e28ad6cece65840d92c2b8403
https://doi.org/10.1364/acp.2009.wl112
https://doi.org/10.1364/acp.2009.wl112
Publikováno v:
Asia Communications and Photonics Conference and Exhibition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c2ef44bf3118b2bed32d37f8d3947f7
https://doi.org/10.1364/acp.2009.thg1
https://doi.org/10.1364/acp.2009.thg1