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RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Publikováno v: The Journal of Supercritical Fluids. 85:183-189

We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65f79b2d19e6af9b204f6bb14f7efe3d
https://doi.org/10.1016/j.supflu.2013.09.002

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Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks

Autor: Simon M. Sze, Osbert Cheng, Ching-En Chen, Chi Wei Wu, Jyun Yu Tsai, Ting-Chang Chang, Wen-Hung Lo, Cheng Tung Huang, Szu-Han Ho, Daniel Chen, Tseung-Yuen Tseng, Hua Mao Chen, Guan Ru Liu

Publikováno v: ECS Journal of Solid State Science and Technology. 2:Q187-Q191

In this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1−xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect tran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::34b34a07c4474259fe9279822733b717
https://doi.org/10.1149/2.027309jss

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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Autor: Ting-Chang Chang, Wan-Lin Chung, Guan-Ru Liu, Hua-Mao Chen, Jyun Yu Tsai, Cheng Tung Huang, Chih-Hao Dai, Ching-En Chen, Osbert Cheng, Szu-Han Ho, Wen-Hung Lo

Publikováno v: Thin Solid Films. 528:10-18

This work investigates impact of mechanical strain on gate-induced-floating-body-effect (GIFBE) for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor field effect transistors (PD SOI p-MOSFETs). First part, the original mec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a740a84c78db0e1518e670794f2529
https://doi.org/10.1016/j.tsf.2012.09.087

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Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs

Autor: Chih Hao Dai, Guan Ru Liu, Bo You, Ting-Chang Chang, Tseung-Yuen Tseng, Ching-En Chen, Szu-Han Ho, Hua Mao Chen, Wen-Hung Lo, Ya-Hsiang Tai, Jyun Yu Tsai

Publikováno v: ECS Solid State Letters. 2:Q90-Q92

aDepartment of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan bDepartment of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan cAdvanced Optoelectronic Technology Center, National Cheng Kung University, Ta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::edf4ed2a27f0e48cacaeefda6fd83ced
https://doi.org/10.1149/2.011311ssl

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Autor: Dershin Gan, Ya-Hsiang Tai, Yu-Ting Su, Jhih-Hong Pan, Tsung-Ming Tsai, Guan-Ru Liu, Hsing-Hua Wu, Ting-Chang Chang, Jian-Yu Chen, Min-Chen Chen, Tian-Jian Chu, Cheng-Wei Tung, Simon M. Sze, Kuan-Chang Chang, Geng-Wei Chang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang

Publikováno v: IEEE Electron Device Letters. 34:399-401

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical pro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c807c7f852134f538106c05832cb2108
https://doi.org/10.1109/led.2013.2241725

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Publikováno v: IEEE Electron Device Letters. 33:1696-1698

In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industrie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe2c5c2468dcd31cdb13b27b69999a04
https://doi.org/10.1109/led.2012.2217933

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Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

Autor: Simon M. Sze, Guan-Ru Liu, Kuo-Hsiao Liao, Tsung-Ming Tsai, Hao Wang, Yong-En Syu, Dershin Gan, Kuan-Chang Chang, Geng-Wei Chang, Cong Ye, Min-Chen Chen, Ya-Hsiang Tai, Yu-Ting Su, Ting-Chang Chang, Hui-Chun Huang

Publikováno v: IEEE Electron Device Letters. 33:1693-1695

In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide ( Sn:SiOx) thin film

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5da31664b63fe1591870298bbb761b6
https://doi.org/10.1109/led.2012.2217932

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Autor: Cheng Tung Huang, Bin Wei Wang, Wen-Hung Lo, Ying Shin Lu, Hua Mao Chen, Guan Ru Liu, Osbert Cheng, Xixin Cao, Jyun Yu Tsai, Ching-En Chen, Szu-Han Ho, Tseung-Yuen Tseng, Ting-Chang Chang

Publikováno v: Applied Physics Letters. 102:012106

This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks. N-Vhigh level characteristic curves with different duty ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe4f3e09086eab7c56ebfc2ce03d2549
https://doi.org/10.1063/1.4773914

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Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Autor: Wen-Hung Lo, Chi Wei Wu, Cheng Tung Huang, Jyun Yu Tsai, Ting-Chang Chang, Osbert Cheng, Guan Ru Liu, Hua Mao Chen, Ching-En Chen, Tseung-Yuen Tseng, Hung Ping Luo, Simon M. Sze, Szu-Han Ho, Ying Shin Lu

Publikováno v: Applied Physics Letters. 101:233509

This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-Vhigh level characteristic curves with different duty ratios indicate tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92cbeff7cd0f735e3ce17c98b9431fcb
https://doi.org/10.1063/1.4769444

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