Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Guan Hui Lim"'
Publikováno v:
Organic Electronics. 15:449-460
Inkjet printing is a mask-less non-contact deposition technique that is potentially suited for prototyping and manufacturing of thin-film polymer organic semiconductor devices from digital images. However new strategies are needed to achieve films wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc0316c2c0b84b9ed39b7151aebc785f
https://doi.org/10.1016/j.orgel.2013.10.025
https://doi.org/10.1016/j.orgel.2013.10.025
Autor:
Thiha Ye, Loke-Yuen Wong, Soo Jin Chua, Jing-Mei Zhuo, Guan-Hui Lim, Peter K. H. Ho, Rui-Qi Png, F. B. Shanjeera Silva
Publikováno v:
Journal of Fluid Mechanics. 713:109-122
The influence of fluid droplet properties on the droplet-on-demand jetting of a Newtonian model fluid (water–isopropanol–ethylene glycol ternary system) has been studied. The composition of the fluid was adjusted to investigate how the Ohnesorge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1926ddba03f6988347c906e7aea76b12
https://doi.org/10.1017/jfm.2012.440
https://doi.org/10.1017/jfm.2012.440
Autor:
Siau Ben Chiah, Zhaomin Zhu, Xing Zhou, Guojun Zhu, Shihuan Lin, Guan Hui Lim, Chengqing Wei, K. Chandrasekaran, Guan Huei See
Publikováno v:
IEEE Transactions on Electron Devices. 55:624-631
This paper presents a new concept for the MOSFET saturation voltages at the drain and source sides referenced to bulk, and applies them to the popularly used smoothing functions for the effective drain-source voltage (Vds,eff ). The proposed model no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6938f86d7a971045cf29b4517c1ea7a6
https://doi.org/10.1109/ted.2007.912951
https://doi.org/10.1109/ted.2007.912951
Autor:
Chengqing Wei, Guan Hui Lim, S.C. Rustagi, Xing Zhou, Guojun Zhu, Shihuan Lin, Guan Huei See, Zhaomin Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 55:616-623
This paper presents a rigorously-derived analytical solution of the Poisson equation with both electrons and holes in pure silicon, which is applied to the analysis of undoped symmetric double-gate transistors. An implicit surface-potential equation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e28940397647d2ebdd6f83c715896f
https://doi.org/10.1109/ted.2007.912999
https://doi.org/10.1109/ted.2007.912999
Autor:
Guan Hui Lim
In this work, backward propagation of variance (BPV) methodology is used to develop a statistical MOSFET model for 0.35um technology to account for global process variations based on electrical data from measurements of MOSFET test structures in scri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f085155ddb3ccb100c5c5ba19e981477
https://hdl.handle.net/10356/41399
https://hdl.handle.net/10356/41399
Autor:
Xing Zhou, Chandrasekaran, K., Guan Huei See, Zhaomin Zhu, Guan Hui Lim, Shihuan Lin, Chengqing Wei, Siau Ben Chiah, Cheng, M., Sanford Chu, Liang-Choo Hsia, Subhash Rustagi
Publikováno v:
2006 8th International Conference on Solid-State & Integrated Circuit Technology Proceedings; 2006, p1193-1197, 5p
Publikováno v:
2007 International Workshop on Electron Devices and Semiconductor Technology (EDST).
A generic double-gate (DG) MOSFET follows a generalized voltage equation from the first integral of Poisson equation and Gauss' law applied at the two gates, which is implicit and, in general, non-integrable when the silicon film is doped. Only DG wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::823a597aca1d2202a4480b2c853059a4
https://doi.org/10.1109/edst.2007.4289772
https://doi.org/10.1109/edst.2007.4289772
Autor:
F. Poh, Chengqing Wei, Guojun Zhu, Guan Huei See, Guan Hui Lim, Zhaomin Zhu, Shihuan Lin, K. Khu, Y.K. Yoo, Xing Zhou
Publikováno v:
2007 IEEE Conference on Electron Devices and Solid-State Circuits.
Continued scaling down of MOSFETs, compounded with limitation in process variation control capabilities, has made MOSFET mismatch more significant for advanced technologies. In order to prevent over compensating for MOSFET mismatch in design margin,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef5c90121dab1bbcac9216fe435f5cc0
https://doi.org/10.1109/edssc.2007.4450310
https://doi.org/10.1109/edssc.2007.4450310
Autor:
Chengqing Wei, Guan Huei See, Y.K. Yoo, Xing Zhou, Guan Hui Lim, Guojun Zhu, K. Khu, F. Poh, Zhaomin Zhu, Shihuan Lin
Publikováno v:
2007 IEEE Conference on Electron Devices and Solid-State Circuits.
MOSFET mismatch model based on BSIM3v3 for a CMOS 0.13 mum technology using backward propagation of variance (BPV) methodology coupled with Pelgrom model basis was developed. Test structures were carefully designed for intrinsic MOSFET drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889a5c0b7b2ae18476f8a2245004b9eb
https://doi.org/10.1109/edssc.2007.4450311
https://doi.org/10.1109/edssc.2007.4450311
Autor:
Guan Hui Lim, Guan Huei See, Liang-Choo Hsia, Zhaomin Zhu, S.C. Rustagi, Xing Zhou, Michael Chye Huat Cheng, Sanford Chu, Siau Ben Chiah, K. Chandrasekaran, Shihuan Lin, Chengqing Wei
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
MOSFETs have been the building blocks of modern VLSI for decades. As classical bulk-CMOS scaling is approaching its physical limit, various types of non-classical CMOS emerge. Although different in structure, topology, and operation, different types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b87571b7c6f51ff97d11056aeb480c
https://doi.org/10.1109/icsict.2006.306073
https://doi.org/10.1109/icsict.2006.306073