Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Grzeszczyk Magdalena"'
Autor:
Kipczak Łucja, Zawadzka Natalia, Jana Dipankar, Antoniazzi Igor, Grzeszczyk Magdalena, Zinkiewicz Małgorzata, Watanabe Kenji, Taniguchi Takashi, Potemski Marek, Faugeras Clément, Babiński Adam, Molas Maciej R.
Publikováno v:
Nanophotonics, Vol 13, Iss 26, Pp 4743-4749 (2024)
Optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark e
Externí odkaz:
https://doaj.org/article/16b60e7ec0be4699b60b1a5260e37317
Autor:
Kapuscinski, Piotr, Slobodeniuk, Artur O., Delhomme, Alex, Faugeras, Clément, Grzeszczyk, Magdalena, Nogajewski, Karol, Watanabe, Kenji, Taniguchi, Takashi, Potemski, Marek
Publikováno v:
Phys. Rev. B 110, 155439 (2024)
Semiconducting transition metal dichalcogenides of group VI are well-known for their prominent excitonic effects and the transition from an indirect to a direct band gap when reduced to monolayers. While considerable efforts have elucidated the Rydbe
Externí odkaz:
http://arxiv.org/abs/2411.02241
Autor:
Ma, Yu, Tang, Chi Sin, Yang, Xiaohui, Ho, Yi Wei, Zhou, Jun, Wu, Wenjun, Sun, Shuo, Bao, Jin-Ke, Wang, Dingguan, Lin, Xiao, Grzeszczyk, Magdalena, Wang, Shijie, Breese, Mark B H, Cai, Chuanbing, Wee, Andrew T. S., Koperski, Maciej, Xu, Zhu-An, Yin, Xinmao
Phase engineering strategies in two-dimensional transition metal dichalcogenides (2D-TMDs) have garnered significant attention due to their potential applications in electronics, optoelectronics, and energy storage. Various methods, including direct
Externí odkaz:
http://arxiv.org/abs/2407.19653
Autor:
Antoniazzi, Igor, Woźniak, Tomasz, Pawbake, Amit, Zawadzka, Natalia, Grzeszczyk, Magdalena, Muhammad, Zahir, Zhao, Weisheng, Ibáñez, Jordi, Faugeras, Clement, Molas, Maciej R., Babiński, Adam
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spec
Externí odkaz:
http://arxiv.org/abs/2402.19040
Autor:
Kipczak, Łucja, Karmakar, Arka, Grzeszczyk, Magdalena, Janiszewska, Róża, Woźniak, Tomasz, Chen, Zhaolong, Pawłowski, Jan, Watanabe, Kenji, Taniguchi, Takashi, Babiński, Adam, Koperski, Maciej, Molas, Maciej R.
Publikováno v:
Scientific Reports 14,7484 (2024)
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic dependence of the R
Externí odkaz:
http://arxiv.org/abs/2312.13088
Autor:
Badrtdinov, Danis I., Rodriguez-Fernandez, Carlos, Grzeszczyk, Magdalena, Qiu, Zhizhan, Vaklinova, Kristina, Huang, Pengru, Hampel, Alexander, Watanabe, Kenji, Taniguchi, Takashi, Jiong, Lu, Potemski, Marek, Dreyer, Cyrus E., Koperski, Maciej, Rösner, Malte
A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic eleme
Externí odkaz:
http://arxiv.org/abs/2305.08240
Autor:
Antoniazzi, Igor, Zawadzka, Natalia, Grzeszczyk, Magdalena, Woźniak, Tomasz, Ibáñez, Jordi, Muhammad, Zahir, Zhao, Weisheng, Molas, Maciej R., Babiński, Adam
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the
Externí odkaz:
http://arxiv.org/abs/2212.05924
Autor:
Kipczak, Łucja, Slobodeniuk, Artur O., Woźniak, Tomasz, Bhatnagar, Mukul, Zawadzka, Natalia, Olkowska-Pucko, Katarzyna, Grzeszczyk, Magdalena, Watanabe, Kenji, Taniguchi, Takashi, Babiński, Adam, Molas, Maciej R.
Publikováno v:
2D Materials 10, 025014 (2023)
Excitons in thin layers of semiconducting transition metal dichalcogenides are highly subject to the strongly modified Coulomb electron-hole interaction in these materials. Therefore, they do not follow the model system of a two-dimensional hydrogen
Externí odkaz:
http://arxiv.org/abs/2211.16186
Autor:
Bhatnagar, Mukul, Woźniak, Tomasz, Kipczak, Łucja, Zawadzka, Natalia, Olkowska-Pucko, Katarzyna, Grzeszczyk, Magdalena, Watanabe, Kenji, Taniguchi, Takashi, Babiński, Adam, Molas, Maciej R.
Publikováno v:
Scientific Reports 12, 14169 (2022)
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to
Externí odkaz:
http://arxiv.org/abs/2204.09034
Autor:
Zinkiewicz, Małgorzata, Grzeszczyk, Magdalena, Kipczak, Łucja, Kazimierczuk, Tomasz, Watanabe, Kenji, Taniguchi, Takashi, Kossacki, Piotr, Babiński, Adam, Molas, Maciej R.
Publikováno v:
Applied Physics Letters 120, 163101 (2022)
The dielectric environment of atomically-thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic band gap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-pl
Externí odkaz:
http://arxiv.org/abs/2201.08342