Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Grzegorz Muzioł"'
Publikováno v:
Advanced Physics Research, Vol 2, Iss 10, Pp n/a-n/a (2023)
Abstract The width of polar InGaN quantum wells (QWs) is usually limited to a few nanometers to ensure a sufficient overlap between the wave functions of the ground electron and hole state. This paper presents the results of material gain measurement
Externí odkaz:
https://doaj.org/article/9e50000527fe4524ab0706ecd1e32677
Autor:
Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2300027
Autor:
Marta Sawicka, Oliwia Gołyga, Natalia Fiuczek, Grzegorz Muzioł, Anna Feduniewicz-Żmuda, Marcin Siekacz, Henryk Turski, Robert Czernecki, Ewa Grzanka, Igor Prozheev, Filip Tuomisto, Czesław Skierbiszewski
Publikováno v:
Materials Science in Semiconductor Processing. 155:107234
Autor:
Natalia Fiuczek, Marta Sawicka, Anna Feduniewicz-Żmuda, Marcin Siekacz, Mikołaj Żak, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muzioł, Paweł Wolny, John J. Kelly, Czesław Skierbiszewski
Publikováno v:
Acta Materialia. 234:118018
Autor:
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, Artem Bercha, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Artur Lachowski, Mikołaj Chlipała, Paweł Wolny, Henryk Turski, Czesław Skierbiszewski
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Gallium nitride-based light-emitting diodes have revolutionized the lighting market by becoming the most energy-efficient light sources. However, the power grid, in example electricity delivery system, is built based on alternating current,
Externí odkaz:
https://doaj.org/article/df2544d985474f0db23f6d9bbbc09288
Autor:
Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, Stanislaw Krukowski
Publikováno v:
Materials, Vol 16, Iss 3, p 1227 (2023)
Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded p
Externí odkaz:
https://doaj.org/article/0f524f866f2b40e6b62f5fa87309fd46
Autor:
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Publikováno v:
Materials, Vol 15, Iss 17, p 5929 (2022)
Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because n-type doping of GaN with Si is relatively straightforwa
Externí odkaz:
https://doaj.org/article/ac6e34f015b74552b38fcc42e64da3e9
Autor:
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, Henryk Turski, Paweł Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
Materials, Vol 15, Iss 1, p 237 (2021)
The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in In
Externí odkaz:
https://doaj.org/article/839c1d35ff194958a2558184c647287d
Autor:
Agata Bojarska, Grzegorz Muzioł, Czesław Skierbiszewski, Ewa Grzanka, Przemysław Wiśniewski, Irina Makarowa, Robert Czernecki, Tadek Suski, Piotr Perlin
Publikováno v:
Applied Physics Express; Sep2017, Vol. 10 Issue 9, p1-1, 1p