Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Grzegorz Kozlowski"'
Autor:
Grzegorz Kozlowski
Publikováno v:
Journal on Baltic Security, Vol 5, Iss 2, Pp 41-51 (2020)
The article discusses the evolution of political and security cooperation between the Republic of Poland and the United States of America in the years 1999–2019. It argues that this relationship has been strengthened over the past several years to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0feb16b8da630ca2af2bb93a77b5fcbf
https://doaj.org/article/46e496184f524ec9bf1d93fcde8e9d22
https://doaj.org/article/46e496184f524ec9bf1d93fcde8e9d22
Autor:
Brian Corbett, Duc V. Dinh, Markus Weyers, Mahbub Akhter, Grzegorz Kozlowski, Donagh O'Mahony, Marian Caliebe, Frank Brunner, Peter J. Parbrook, Pleun Maaskant, Ferdinand Scholz, Silvino Presa
Publikováno v:
physica status solidi (a). 212:2196-2200
authoren InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically–mechanically polished (112―2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc0aaea61236bf4d2ad00dc02b5e5d2d
https://doi.org/10.1002/pssa.201532350
https://doi.org/10.1002/pssa.201532350
The present invention relates to Ge-based light emitter structure that is CMOS compatible. In particular, the invention is related to a semiconductor light emitter device and to a process for fabricating a semiconductor light emitter device.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3668::08a6ea6db989e4ff9718c63213f371ba
https://hdl.handle.net/11590/327723
https://hdl.handle.net/11590/327723
Publikováno v:
Journal of Applied Crystallography
Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efcca94c3f43e996b02a0059b461926e
https://doi.org/10.1107/s0021889813003518
https://doi.org/10.1107/s0021889813003518
Autor:
Cezary Kabała, Krzysztof J. Kaliński, Małgorzata Malkiewicz, Grzegorz Kozlowski, Jarosław Waroszewski, Ryszard Mazurek
Publikováno v:
CATENA. 104:161-173
Pleistocene periglacial cover-beds have been considered to be the proper parent material of soils in the medium mountains of the Central Europe and in other areas influenced by the periglacial conditions. The concept highlights an importance of solif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce64b70ec9d907b1bd6d9177c29c5ea
https://doi.org/10.1016/j.catena.2012.11.006
https://doi.org/10.1016/j.catena.2012.11.006
Autor:
O. Fursenko, Yuji Yamamoto, Peter Zaumseil, Grzegorz Kozlowski, K. Schulz, Bernd Tillack, M. A. Schubert, Thomas Schroeder, Joachim Bauer
Publikováno v:
Microelectronic Engineering. 97:169-172
A fabrication process for Si nanopillars (NPs) as template for the Ge nanoheteroepitaxy (NHE) was developed. The NHE concept suggests that by fabricating three-dimensional free standing NP, the NP can be elastically deformed by deposited heteroepitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a89ef72d2d2c32c2db7f57fa23e0dc
https://doi.org/10.1016/j.mee.2012.03.033
https://doi.org/10.1016/j.mee.2012.03.033
Autor:
Grzegorz Kozlowski, Yuji Yamamoto, Jana Matejova, Thomas Schroeder, Bernd Tillack, Markus Andreas Schubert, Peter Zaumseil, Joachim Bauer
Publikováno v:
Thin Solid Films. 520:3240-3244
The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge–Si system for different fields of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e09b21405b7864894099ce5e3fd58a
https://doi.org/10.1016/j.tsf.2011.10.178
https://doi.org/10.1016/j.tsf.2011.10.178
Publikováno v:
Thin Solid Films. 520:3216-3221
Blanket and selective Ge growth on Si is investigated using reduced pressure chemical vapor deposition. To reduce the threading dislocation density (TDD) at low thickness, Ge deposition with cyclic annealing followed by HCl etching is performed. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a8ca3fbe6e4c5a8413002b1b2c162e
https://doi.org/10.1016/j.tsf.2011.10.095
https://doi.org/10.1016/j.tsf.2011.10.095
Autor:
Piotr Dudek, Hans-Joachim Müssig, Grzegorz Lupina, Jarek Dabrowski, Gunther Lippert, Olaf Seifarth, Grzegorz Kozlowski, Hans-Jürgen Thieme, Thomas Schroeder
Publikováno v:
physica status solidi (b). 248:323-326
Thin layers of SrHfO3, BaHfO3 and BaZrO3 are deposited onto TiN substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20. Rapid thermal annealing induces cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d744c7192b29328815c07f7c057da28
https://doi.org/10.1002/pssb.201046456
https://doi.org/10.1002/pssb.201046456
Group-II Hafnate, Zirconate, and Tantalate High-k Dielectrics for MIM Applications: The Defect Issue
Autor:
Piotr Dudek, Christian Wenger, Gunther Lippert, Grzegorz Lupina, Christian Walczyk, Ronny Schmidt, Jarek Dąbrowski, Grzegorz Kozlowski
Publikováno v:
ECS Transactions. 25:219-239
We discuss the role of defects in metal oxides (mostly in strontium hafnate, barium hafnate and barium zirconate). The discussion is based on macroscopic and microscopic (C-AFM) electrical meas-urements, ab initio calculations for formation energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4881cc340de8185dcd612ff86a77dc
https://doi.org/10.1149/1.3206622
https://doi.org/10.1149/1.3206622