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Autor:
Grzegorz Ilgiewicz, Wojciech Macherzynski, Joanna Prazmowska-Czajka, Andrzej Stafiniak, Regina Paszkiewicz
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 355-360 (2021)
Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usua
Externí odkaz:
https://doaj.org/article/df16158e999a4fe4bcf604a65f2fe8e3
