Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Grzegorz Głuszko"'
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a n
Externí odkaz:
https://doaj.org/article/86e7e9b1960b4615a7c81b301e958170
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to ob
Externí odkaz:
https://doaj.org/article/adbaf07b52714d048cad257cc7096153
Autor:
Robert Mroczyński, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic
Externí odkaz:
https://doaj.org/article/003c8061cc35468d90e4d4ebe16d36db
Autor:
Tomasz Bieniek, Romuald B. Beck, Andrzej Jakubowski, Grzegorz Głuszko, Piotr Konarski, Michał Ćwil
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by
Externí odkaz:
https://doaj.org/article/2848ffbfd9ec43f4ae7e5115d8f77103
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2023)
This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the
Externí odkaz:
https://doaj.org/article/6e518265230d479eafdb5d11f5dc728a
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2023)
This study describes a novel technique to form good quality low temperature oxide (< 350°C). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively et
Externí odkaz:
https://doaj.org/article/a97f01e2d1d5499891f6fe776406858f
Publikováno v:
Microelectronics International. 37:103-107
Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy
Publikováno v:
Warsaw University of Technology-OmegaPSIR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::05066e9f70a0eebc8c33523abf750747
http://elteimaps2019.pwr.edu.pl/
http://elteimaps2019.pwr.edu.pl/