Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Grzegorz Łupina"'
Autor:
Gunther Lippert, Seiichi Miyazaki, Akio Ohta, Hans Joachim Müssig, Seiji Inumiya, Jaroslaw Dąbrowski, Y. Nara, Y. Pei, Grzegorz Łupina, Grzegorz Kozlowski
Publikováno v:
Materials Science Forum. 608:55-109
Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbba63826316f86c9ebbe22a84d375a6
https://doi.org/10.4028/www.scientific.net/msf.608.55
https://doi.org/10.4028/www.scientific.net/msf.608.55
Autor:
Dieter Schmeißer, Hans-Joachim Müssig, Peter Formanek, Christian Wenger, Grzegorz Łupina, Peter Zaumseil, Jarek Dąbrowski, R. Sorge
Publikováno v:
Materials Science in Semiconductor Processing. 7:215-220
We report on the structural and electrical properties of Pr-based high- k dielectric films fabricated by solid-state reaction between metallic Pr and SiO 2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76fbdd655dd29a622ab1b8b6488236f2
https://doi.org/10.1016/j.mssp.2004.09.010
https://doi.org/10.1016/j.mssp.2004.09.010
Autor:
Peter Formanek, Hans-Joachim Müssig, Peter Zaumseil, Christian Wenger, R. Sorge, Dieter Schmeißer, Grzegorz Łupina, Jarek Dąbrowski
Publikováno v:
MRS Proceedings. 811
We have fabricated Pr-based high-k gate dielectric films by physical vapor deposition of metallic Pr on SiO2 under ultra-high vacuum (UHV) conditions at room temperature, followed by oxidation and annealing steps. The films have been analyzed by elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d54d063afce2434295f83bff98c8ac75
https://doi.org/10.1557/proc-811-d7.10
https://doi.org/10.1557/proc-811-d7.10