Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

Autor: Grzegorczyk, A.P., Weyher, J.L., Hageman, P.R., Larsen, P.K.

Publikováno v: In Thin Solid Films 2008 516(8):2314-2320

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

Autor: Grzegorczyk, A.P., Hageman, P.R., Weyher, J.L., Larsen, P.K.

Publikováno v: In Journal of Crystal Growth 15 September 2005 283(1-2):72-80

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Autor: Dam, C.E.C. ^*, Grzegorczyk, A.P., Hageman, P.R., Dorsman, R., Kleijn, C.R., Larsen, P.K.

Publikováno v: In Journal of Crystal Growth 15 October 2004 271(1-2):192-199

Influence of the substrate misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD

Autor: Rudzinski, M., Hageman, P.R., Grzegorczyk, A.P., Macht, L.J., Rodle, T.C., Jos, H.F.F., Larsen, P.K.

Publikováno v: Physica Status Solidi. C, Conferences and Critical Reviews, 2, 2141-2144
Physica Status Solidi. C, Conferences and Critical Reviews, 2, 7, pp. 2141-2144

Contains fulltext : 32640.pdf (Publisher’s version ) (Closed access) 4 p.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::47374fb611b707ced22f1a5c74f4273d
https://hdl.handle.net/2066/32640

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Autor: Macht, L.J., Weyher, J.L., Grzegorczyk, A.P., Larsen, P.K.

Publikováno v: Physical Review. B, Condensed Matter and Materials Physics, 71, 073309-1-073309-4
Physical Review. B, Condensed Matter and Materials Physics, 71, 7, pp. 073309-1-073309-4

Contains fulltext : 33011.pdf (Publisher’s version ) (Open Access)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ede0c5fe31d06c3391a239975d9040b7
http://hdl.handle.net/2066/33011