Zobrazeno 1 - 10
of 1 489
pro vyhledávání: '"Gruverman A"'
Autor:
Li, Xin, Ren, Guodong, Lu, Haidong, Samanta, Kartik, Shah, Amit Kumar, Omprakash, Pravan, Yun, Yu, Buragohain, Pratyush, Cao, Huibo, Hachtel, Jordan A., Lupini, Andrew R., Chi, Miaofang, Tsymbal, Evgeny Y., Gruverman, Alexei, Mishra, Rohan, Xu, Xiaoshan
The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the
Externí odkaz:
http://arxiv.org/abs/2408.01830
Autor:
Erickson, Adam, Shah, Syed Qamar Abbas, Mahmood, Ather, Buragohain, Pratyush, Fescenko, Ilja, Gruverman, Alexei, Binek, Christian, Laraoui, Abdelghani
Publikováno v:
Advanced Functional Materials 2408542 (2024)
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic f
Externí odkaz:
http://arxiv.org/abs/2405.11122
Autor:
Li, Xin, Yun, Yu, Buragohain, Pratyush, Thind, Arashdeep Singh, Walko, Donald A., Yang, Detian, Mishra, Rohan, Gruverman, Alexei, Xu, Xiaoshan
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper
Externí odkaz:
http://arxiv.org/abs/2309.14639
Autor:
Conroy, Michele, Småbråten, Didrik René, Ophus, Colin, Shapovalov, Konstantin, Ramasse, Quentin M., Hunnestad, Kasper Aas, Selbach, Sverre M., Aschauer, Ulrich, Moore, Kalani, Gregg, J. Marty, Bangert, Ursel, Stengel, Massimiliano, Gruverman, Alexei, Meier, Dennis
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-, Bloch-, and
Externí odkaz:
http://arxiv.org/abs/2309.02068
Autor:
Haidong Lu, Dong-Jik Kim, Hugo Aramberri, Marco Holzer, Pratyush Buragohain, Sangita Dutta, Uwe Schroeder, Veeresh Deshpande, Jorge Íñiguez, Alexei Gruverman, Catherine Dubourdieu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widel
Externí odkaz:
https://doaj.org/article/4f5ee4837dbb4177a3443d1b75c52766
Autor:
McCluskey, Conor J., Colbear, Matthew G., McConville, James P. V., McCartan, Shane J., Maguire, Jesi R., Conroy, Michele, Moore, Kalani, Harvey, Alan, Trier, Felix, Bangert, Ursel, Gruverman, Alexei, Bibes, Manuel, Kumar, Amit, McQuaid, Raymond G. P., Gregg, J. Marty
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental as
Externí odkaz:
http://arxiv.org/abs/2206.14585
Autor:
Tikhonov, Y., Maguire, J. R., McCluskey, C. J., McConville, J. P. V., Kumar, A., Meier, D., Razumnaya, A., Gregg, J. M., Gruverman, A., Vinokur, V. M., Luk'yanchuk, I.
Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emerg
Externí odkaz:
http://arxiv.org/abs/2204.05000
Autor:
Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder
Publikováno v:
Advanced Science, Vol 11, Iss 16, Pp n/a-n/a (2024)
Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al1−xScxN) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization of the full potential of Al1−xScxN requires a comprehe
Externí odkaz:
https://doaj.org/article/bac153d85d1c4f2fb1809fc2bf713d5b
Autor:
Lee, J. W., Eom, K., Paudel, T. R., Wang, B., Lu, H., Huyan, H., Lindemann, S., Ryu, S., Lee, H., Kim, T. H., Yuan, Y., Zorn, J. A., Lei, S., Gao, W., Tybell, T., Gopalan, V., Pan, X., Gruverman, A., Chen, L. Q., Tsymbal, E. Y., Eom, C. B.
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically
Externí odkaz:
http://arxiv.org/abs/2109.08296
Autor:
Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, Xu, Xiaoshan
Publikováno v:
Nature Materials 21, 903 (2022)
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier wo
Externí odkaz:
http://arxiv.org/abs/2109.05071