Zobrazeno 1 - 10
of 519
pro vyhledávání: '"Gruverman, Alexei"'
Autor:
Li, Xin, Ren, Guodong, Lu, Haidong, Samanta, Kartik, Shah, Amit Kumar, Omprakash, Pravan, Yun, Yu, Buragohain, Pratyush, Cao, Huibo, Hachtel, Jordan A., Lupini, Andrew R., Chi, Miaofang, Tsymbal, Evgeny Y., Gruverman, Alexei, Mishra, Rohan, Xu, Xiaoshan
The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the
Externí odkaz:
http://arxiv.org/abs/2408.01830
Autor:
Erickson, Adam, Shah, Syed Qamar Abbas, Mahmood, Ather, Buragohain, Pratyush, Fescenko, Ilja, Gruverman, Alexei, Binek, Christian, Laraoui, Abdelghani
Publikováno v:
Advanced Functional Materials 2408542 (2024)
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic f
Externí odkaz:
http://arxiv.org/abs/2405.11122
Autor:
Buragohain, Pratyush, Erickson, Adam, Kariuki, Pamenas, Mittmann, Terence, Richter, Claudia, Lomenzo, Patrick D., Lu, Haidong, Schenk, Tony, Mikolajick, Thomas, Schroeder, Uwe, Gruverman, Alexei
Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–v
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81033
https://tud.qucosa.de/api/qucosa%3A81033/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81033/attachment/ATT-0/
Autor:
Li, Xin, Yun, Yu, Buragohain, Pratyush, Thind, Arashdeep Singh, Walko, Donald A., Yang, Detian, Mishra, Rohan, Gruverman, Alexei, Xu, Xiaoshan
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper
Externí odkaz:
http://arxiv.org/abs/2309.14639
Autor:
Conroy, Michele, Småbråten, Didrik René, Ophus, Colin, Shapovalov, Konstantin, Ramasse, Quentin M., Hunnestad, Kasper Aas, Selbach, Sverre M., Aschauer, Ulrich, Moore, Kalani, Gregg, J. Marty, Bangert, Ursel, Stengel, Massimiliano, Gruverman, Alexei, Meier, Dennis
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-, Bloch-, and
Externí odkaz:
http://arxiv.org/abs/2309.02068
Autor:
McCluskey, Conor J., Colbear, Matthew G., McConville, James P. V., McCartan, Shane J., Maguire, Jesi R., Conroy, Michele, Moore, Kalani, Harvey, Alan, Trier, Felix, Bangert, Ursel, Gruverman, Alexei, Bibes, Manuel, Kumar, Amit, McQuaid, Raymond G. P., Gregg, J. Marty
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental as
Externí odkaz:
http://arxiv.org/abs/2206.14585
Autor:
Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, Xu, Xiaoshan
Publikováno v:
Nature Materials 21, 903 (2022)
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier wo
Externí odkaz:
http://arxiv.org/abs/2109.05071
Autor:
Dutta, Sangita, Buragohain, Pratyush, Glinsek, Sebastjan, Richter, Claudia, Aramberri, Hugo, Lu, Haidong, Schroeder, Uwe, Defay, Emmanuel, Gruverman, Alexei, Íñiguez, Jorge
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this a
Externí odkaz:
http://arxiv.org/abs/2107.07414
Autor:
Jiang, Xuanyuan, Wang, Xiao, Buragohain, Pratyush, Clark, Andy, Lu, Haidong, Poddar, Shashi, Yu, Le, DiChiara, Anthony D, Gruverman, Alexei, Cheng, Xuemei, Xu, Xiaoshan
Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-response due to ionic metastable states is rare. In this work, we repor
Externí odkaz:
http://arxiv.org/abs/2105.02628
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