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pro vyhledávání: '"Grutter, Peter"'
Autor:
Bustamante, José, Miyahara, Yoichi, Fairgrieve-Park, Logan, Spruce, Kieran, See, Patrick, Curson, Neil, Stock, Taylor, Grutter, Peter
The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this
Externí odkaz:
http://arxiv.org/abs/2403.13935
Autor:
Cowie, Megan, Constantinou, Procopios C., Curson, Neil J., Stock, Taylor J. Z., Grutter, Peter
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. Thes
Externí odkaz:
http://arxiv.org/abs/2403.07251
Autor:
Schumacher, Zeno, Rejali, Rasa, Cowie, Megan, Spielhofer, Andreas, Miyahara, Yoichi, Grutter, Peter
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for s
Externí odkaz:
http://arxiv.org/abs/2008.01562
Publikováno v:
npj 2D Materials and Applications 4, 30 (2020)
Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their direct observ
Externí odkaz:
http://arxiv.org/abs/2005.06442
Autor:
Anthonisen, Madeleine, Grutter, Peter
Working in the framework of morphoelasticity, we develop a model of neurite growth in response to elastic deformation. We decompose the applied stretch into an elastic component and a growth component, and adopt an observationally-motivated model for
Externí odkaz:
http://arxiv.org/abs/1912.05735
Autor:
Miyahara, Yoichi, Griffin, Harrisonn, Roy-Gobeil, Antoine, Belyansky, Ron, Bergeron, Hadallia, Bustamante, José, Grutter, Peter
Reliable operation of frequency modulation mode atomic force microscopy (FM-AFM) depends on a clean resonance of an AFM cantilever. It is recognized that the spurious mechanical resonances which originate from various mechanical components in the mic
Externí odkaz:
http://arxiv.org/abs/1910.11895
Autor:
Zhang, Yuning, Miyahara, Yoichi, Derriche, Nassim, Yang, Wayne, Yazda, Khadija, Liu, Zezhou, Grutter, Peter, Reisner, Walter
The dielectric breakdown approach for forming nanopores has greatly accelerated the pace of research in solid-state nanopore sensing, enabling inexpensive formation of nanopores via a bench top setup. Here we demonstrate the potential of tip controll
Externí odkaz:
http://arxiv.org/abs/1901.07071
Akademický článek
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A common use for atomic force microscopy is to quantify local forces through tip-sample interactions between the probe tip and a sample surface. The accuracy of these measurements depends on the accuracy to which the cantilever spring constant is kno
Externí odkaz:
http://arxiv.org/abs/1810.01789
Atomic force microscopy (AFM) is an analytical surface characterization tool which can reveal a sample's topography with high spatial resolution while simultaneously probing tip-sample interactions. Local measurement of chemical properties with high-
Externí odkaz:
http://arxiv.org/abs/1809.01584