Le défi français à la prééminence anglaise au Brésil, 1822-1850

Autor: Grosse, Philippe

La France possède une industrie qui en couvre les principales branches, dimensionnée pour faire face aux besoins de la consommation, mais partie avec retard dans la révolution industrielle, elle n’est pas apte à soutenir la concurrence de natio

Externí odkaz: http://www.theses.fr/2015PA040228

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Design and Fabrication of a Ring-Coupled Mach

Autor: Kempf, Eva, Labeye, Pierre, Grosse, Philippe, Boeuf, Frederic, Monfray, Stephane, Charette, Paul, Orobtchouk, Regis

Publikováno v: ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC)
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.179-182, ⟨10.1109/ESSCIRC53450.2021.9567877⟩

International audience; In this paper, we present a CMOScompatible integrated photonics resonant gyroscope incorporating active Si&Ge components with low-loss SiN waveguiding structures for the first time. The gyroscope design is based on a ring-coup

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______177::c852ad61ddacfd9edbc2dcd7615bf38e
https://halshs.archives-ouvertes.fr/halshs-03515494/document

Integrated SiN on SOI dual photonic devices for advanced datacom solutions Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Autor: Guerber, Sylvain, Alonso-Ramos, Carlos, Benedikovic, Daniel, Perez-Galacho, Diego, Le Roux, Xavier, Vulliet, Nathalie, Cremer, Sébastien, Babaud, Laurene, Planchot, Jonathan, Benoit, Daniel, Chantraine, Paul, Leverd, François, Ristoiu, Delia, Grosse, Philippe, Marris-Morini, Delphine, Vivien, Laurent, Baudot, Charles, Boeuf, Frédéric

Publikováno v: Silicon Photonics: From Fundamental Research to Manufacturing
SPIE Photonics Europe, Silicon Photonics: From Fundamental Research to Manufacturing
SPIE Photonics Europe, Silicon Photonics: From Fundamental Research to Manufacturing, May 2018, Strasbourg, France. ⟨10.1117/12.2306160⟩

International audience; We report on the co-integration of an additional passive layer within a Silicon Photonic chip for advanced passive devices. Being a CMOS compatible material, Silicon Nitride (SiN) appears as an attractive candidate. With a mod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2d18bd9478fbc2360e40218f3583c0be
https://hal.science/hal-02927100/document

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