Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Groenland, A.W."'
Publikováno v:
In Sensors & Actuators: A. Physical 2009 152(1):39-47
Publikováno v:
In Microelectronics Reliability 2007 47(8):1195-1201
Publikováno v:
WO 2015169771 (A1)
Disclosed is an ultrasonic transducer assembly comprising an ultrasonic transducer chip (100) having a main surface comprising a plurality of ultrasound transducer elements (112) and a plurality of first contacts (120) for connecting to said ultrasou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::0230a0838950c225c68fb4e3fb922a27
http://resolver.tudelft.nl/uuid:4748ae78-9cbc-4a81-9545-20d51863f30b
http://resolver.tudelft.nl/uuid:4748ae78-9cbc-4a81-9545-20d51863f30b
Publikováno v:
Proceedings of STW.ICT Conference 2010, 89-92
STARTPAGE=89;ENDPAGE=92;TITLE=Proceedings of STW.ICT Conference 2010
STARTPAGE=89;ENDPAGE=92;TITLE=Proceedings of STW.ICT Conference 2010
In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::2608e57cd77440c2b6002c1e8bbd6ccb
https://research.utwente.nl/en/publications/on-the-leakage-problem-of-mim-capacitors-due-to-improper-etching-of-titanium-nitride(584eb30a-5879-493a-a29a-6f1150b3729a).html
https://research.utwente.nl/en/publications/on-the-leakage-problem-of-mim-capacitors-due-to-improper-etching-of-titanium-nitride(584eb30a-5879-493a-a29a-6f1150b3729a).html
Publikováno v:
Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 150-152
STARTPAGE=150;ENDPAGE=152;TITLE=Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
STARTPAGE=150;ENDPAGE=152;TITLE=Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on electrodes on which the ultrathin film is deposited. The contact resistance of the buried electrodes to the ultrathin ALD TiN films is inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::b2af5659519af216e84e41b13976e4fd
https://research.utwente.nl/en/publications/contact-chain-measurements-for-ultrathin-conducting-films(7a573c49-7c99-4462-9638-5058f7053f85).html
https://research.utwente.nl/en/publications/contact-chain-measurements-for-ultrathin-conducting-films(7a573c49-7c99-4462-9638-5058f7053f85).html
Autor:
Groenland, A.W., Brunets, I., Boogaard, A., Aarnink, Antonius A.I., Kovalgin, Alexeij Y., Schmitz, Jurriaan
Publikováno v:
Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 468-471
STARTPAGE=468;ENDPAGE=471;TITLE=Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
STARTPAGE=468;ENDPAGE=471;TITLE=Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::348da6a1086b1696d091ab1914d65dc1
https://research.utwente.nl/en/publications/thermal-and-plasmaenhanced-oxidation-of-ald-tin(7d7768ea-691b-4d1c-93c8-6f24c5a7bf82).html
https://research.utwente.nl/en/publications/thermal-and-plasmaenhanced-oxidation-of-ald-tin(7d7768ea-691b-4d1c-93c8-6f24c5a7bf82).html
Publikováno v:
Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008, P-54
STARTPAGE=P;ENDPAGE=54;TITLE=Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008
STARTPAGE=P;ENDPAGE=54;TITLE=Proceedings of the 18th International Conference on Atomical Layer Deposition ALD 2008
The applications of TiN films in IC technology (i.e., diffusion barrier, gate material, current conductor, and heater) are based on their high thermodynamic stability, low electrical resistivity, and high mechanical hardness. Sputtered stoichiometric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::0b104a588499b271ca5a771257744900
https://research.utwente.nl/en/publications/a-study-of-thermal-oxidation-and-plasmaenhanced-oxidationreduction-of-ald-tin-layers(48698885-b77d-4e35-86ed-de7bfe83ceea).html
https://research.utwente.nl/en/publications/a-study-of-thermal-oxidation-and-plasmaenhanced-oxidationreduction-of-ald-tin-layers(48698885-b77d-4e35-86ed-de7bfe83ceea).html
Publikováno v:
STARTPAGE=581;ENDPAGE=583;TITLE=10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
In this work, a miniaturized hotplate device with a low power consumption of a few milliwatts and a CMOS compatible fabrication process is proposed and analyzed. This micro hotplate is based on a nanoscopic conductive link (Ø 10- 100 nm) created bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::d666aa9bf0aee1ef9e9ff47d3eb57742
https://research.utwente.nl/en/publications/simulation-of-a-nanolink-hotplate-device(4b526110-a0fe-43cc-9562-aa0ef1b85be0).html
https://research.utwente.nl/en/publications/simulation-of-a-nanolink-hotplate-device(4b526110-a0fe-43cc-9562-aa0ef1b85be0).html
Publikováno v:
2009 IEEE International Conference on Microelectronic Test Structures; 2009, p191-195, 5p
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