Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Griselda Bonilla"'
Autor:
Ernest Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
On-chip interconnects are fundamental to semiconductor functionality. We discuss the scaling challenges and opportunities to continue to offer increased system performance, especially as computing systems become heterogeneous. Continued focus must sh
Autor:
Son Nguyen, Hosadurga Shobha, Thomas Haigh, James Chen, Joe Lee, Takeshi Nogami, Eric Liniger, Stephan Cohen, Chao-Kun Hu, Huai Huang, Yiping Yao, Donald Canaperi, CorneliusBrown Peethala, Theo Standaert, Griselda Bonilla
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Hosadurga Shobha, Donald F. Canaperi, Chao-Kun Hu, Son V. Nguyen, Junedong Lee, Eric G. Liniger, Yongjin Yao, Griselda Bonilla, Chen Jia, Takeshi Nogami, Huai Huang, Stephan A. Cohen, B. Peethala, Theodorus E. Standaert, Thomas J. Haigh
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Mechanically robust low k C-rich SiCN and pSiCN dielectrics with excellent built-in Cu oxidation and diffusion barrier have been developed and evaluated as potential alternative low k Interlevel dielectrics for Cu interconnects. The novel low k dense
Autor:
C.-C. Yang, Daniel C. Edelstein, G. Lian, Theodorus E. Standaert, Huai Huang, Griselda Bonilla, M. Ali
Publikováno v:
IEEE Electron Device Letters. 38:1579-1582
Via resistance reduction in Cu interconnects was achieved through a pre-liner dielectric nitridation process prior to pure Ta liner deposition. Replacing TaN with Ta in the conventional liner stack reduces Cu via resistance, while the nitridation tre
Publikováno v:
Extreme Mechanics Letters. 13:100-107
The mechanical properties of two porous ultra-low-k (ULK) dielectric thin films (porous carbon-doped silicon dioxide (pSiCOH); and octamethylcyclotetrasiloxane (OMCTS)) were measured by nanoindentation. Since a direct contact of a nanoindentation tip
Autor:
Minhua Lu, Boshen Fu, Thomas M. Shaw, Griselda Bonilla, Hongbing Lu, Yingjie Du, Xiao Hu Liu, Thomas A. Wassick
Publikováno v:
Mechanics of Time-Dependent Materials. 21:287-305
Current nanoindentation techniques for the measurement of creep properties are applicable to viscoplastic materials with negligible elastic deformations. A new technique for characterization of creep behavior is needed for situations where the elasti
Autor:
Richard G. Southwick, James J. Kelly, C.-C. Yang, Miaomiao Wang, Gauri Karve, P. S. McLaughin, Huai Huang, Griselda Bonilla
Publikováno v:
IRPS
Time dependent dielectric breakdown (TDDB) properties of cobalt and ruthenium interconnects were investigated in 36 nm pitch dual damascene test vehicles. We demonstrate that cobalt and ruthenium interconnects with significantly scaled barrier/adhesi
Autor:
Yb. Kim, Huai Huang, Theodorus E. Standaert, Chao-Kun Hu, Motoyama Koichi, O. van der Straten, J-H Lee, P. McLaughlin, Griselda Bonilla, J-K Choi, J. Maniscalco, Roger A. Quon
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
Low resistance Cu interconnects with CVD Ru liner have been demonstrated for 7 nm node. Ru liner thickness reduction has been achieved by replacing PVD TaN with a bilayer PVD Ta and ALD TaN stack, while maintaining adequate Cu fill performance. The n
Autor:
C.-C. Yang, Terry A. Spooner, James Chingwei Li, J. Maniscalco, Hosadurga Shobha, Griselda Bonilla, Motoyama Koichi, Hsiang-Jen Huang, Takeshi Nogami, Theodorus E. Standaert, Nicholas A. Lanzillo
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
The impacts of ruthenium and cobalt liners on copper resistivity have been investigated at beyond 7nm dimensions. Liner metal conduction was carefully evaluated in a Cu resistivity derivation using the temperature coefficient of resistivity (TCR) app