Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Autor: Berthet, Fanny, Guhel, Yannick, Gualous, Hamid, Boudart, Bertrand, Trolet, Jean-Lionel, Piccione, Marc, Sbrugnera, Vanessa, Grimbert, Bertrand, Gaquière, Christophe

Publikováno v: In Solid State Electronics June 2012 72:15-21

Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

Autor: Mosbahi, H., Charfeddine, M., Gassoumi, M., Mejri, H., Gaquière, Christophe, Grimbert, Bertrand, Zaidi, M.A., Maaref, H.

Publikováno v: Sensors & Transducers, Vol 27, Iss Special Issue, Pp 277-279 (2014)
Sensors & Transducers Journal
Sensors & Transducers Journal, International Frequency Sensor Association (IFSA), 2014, 27, pp.277-279
Sensors & Transducers Journal, 2014, 27, pp.277-279

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::959e460efa1207b9abfe24a5e1a0705f
http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_514.pdf

GaN MEMS resonators : from demonstration to microsystem-compatible performances

Autor: Faucher, Marc, Ben Amar, Achraf, Zhang, Victor, Cordier, Yvon, Werquin, Matthieu, Brandli, Virginie, Grimbert, Bertrand, Vaurette, Francois, Tilmant, Pascal, François, Marc, Boyaval, Christophe, Lepilliet, Sylvie, Ducatteau, Damien, Gaquière, Christophe, Buchaillot, Lionel, Theron, Didier

Publikováno v: Proceedings of 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a0a95f1b38fb4584b7e86d343fbd3ce7
https://hal.archives-ouvertes.fr/hal-00801104

Resonant HEMT transducers and integrated MEMS resonators based on AlGaN/GaN/Si heterostructures

Autor: Faucher, Marc, Grimbert, Bertrand, Brandli, Virginie, Cordier, Yvon, Werquin, Matthieu, Buchaillot, Lionel, Gaquière, Christophe, Theron, Didier

Publikováno v: Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, 2010, Newport Beach, CA, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::65ef9cdfb68d4cbeb37b6b3d27e21f33
https://hal.archives-ouvertes.fr/hal-00808202

94-GHz low noise amplifier on InP in coplanar technology

Autor: Hoel, Virginie, Boret, Samuel, Grimbert, Bertrand, Aperce, Gilles, Bollaert, S., Happy, Henri, Wallart, Xavier, Cappy, A.

Publikováno v: Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use silicon nitride SixNy technology, which leads to naturall

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::902694e3a2692d706e07c830b3b266e2
http://amsacta.unibo.it/1414/