Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Grey Abernathy"'
Autor:
Grey Abernathy, Solomon Ojo, Abdulla Said, Joshua M. Grant, Yiyin Zhou, Hryhorii Stanchu, Wei Du, Baohua Li, Shui-Qing Yu
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract Direct band gap GeSn alloys have recently emerged as promising lasing source materials for monolithic integration on Si substrate. In this work, optically pumped mid-infrared GeSn lasers were studied with the observation of dual-wavelength l
Externí odkaz:
https://doaj.org/article/3b5d38a17afc4ca9b7724d514b621954
Autor:
Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Emmanuel Wanglia, Samir K. Saha, Abbas Sabbar, Wei Du, Murtadha Alher, Bao-Hua Li, Shui-Qing Yu
Publikováno v:
Materials, Vol 14, Iss 24, p 7637 (2021)
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and
Externí odkaz:
https://doaj.org/article/457679cf379d41b197b99ba177ae8cee
Autor:
Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025104-025104-7 (2018)
This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only
Externí odkaz:
https://doaj.org/article/bd2b733bd4494d81ab941894828e82d3
Autor:
Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu, Wei Du
Publikováno v:
Silicon Photonics XVIII.
Autor:
Grey Abernathy, Solomon Ojo, Hryhorii Stanchu, Yiyin Zhou, Oluwatobi Olorunsola, Joshua Grant, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Shui-Qing Yu
Publikováno v:
Optics Letters. 48:1626
The study of all-group-IV SiGeSn lasers has opened a new avenue to Si-based light sources. SiGeSn heterostructure and quantum well lasers have been successfully demonstrated in the past few years. It has been reported that, for multiple quantum well
Autor:
Grey Abernathy, Solomon Ojo, Joshua M. Grant, Yiyin Zhou, Wei Du, Andrian Kuchuk, Baohua Li, Shui-Qing Yu
Publikováno v:
Applied Physics Letters. 121:171101
SiGeSn material is of great interest for the development of all-group-IV lasers on a Si substrate. While GeSn-based lasers have been reported worldwide, probing the fundamental limit to lase is highly desirable to reveal the material capability as a
Autor:
Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Lucas Miller, Kyle Rosler, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu, Wei Du
Publikováno v:
Journal of Physics D: Applied Physics. 55:443001
Recent studies of SiGeSn materials and optoelectronic devices hold great promise for photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and power-efficient. Thanks to the breakthrough of low temperature material g
Autor:
Yong-Hang Zhang, Shui-Qing Yu, Wei Dou, Perry C. Grant, Joe Margetis, Grey Abernathy, Solomon Ojo, John Tolle, Yiyin Zhou, Oluwatobi Olorunsola, Baohua Li, Andrian Kuchuk, Wei Du, Sylvester Amoah
Publikováno v:
Nanotechnology. 33(8)
In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ
Autor:
Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Grey Abernathy, Samir Saha, Emmanuel Wangila, Joshua Grant, Hryhorii Stanchu, Sudip Acharya, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu
Publikováno v:
Journal of Physics D: Applied Physics. 55:305101
GeSn-based quantum wells (QWs) are of great interests for the development of all-group-IV optoelectronic devices such as lasers. Using a GeSn buffer and SiGeSn barrier has been studied with the aim of obtaining a direct bandgap well and increasing th
Autor:
Joe Margetis, Sylvester Amoah, Solomon Ojo, Baohua Li, Grey Abernathy, Wei Du, Huong Tran, Shui-Qing Yu, Yiyin Zhou, John Tolle
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrated electrically injected GeSn laser with the threshold to as low as 353 A/cm2 at 10 K. The threshold reduction was achieved by introducing a thicker SiGeSn cap, eliminating the optical loss from the top metal contact. The peak power was