0.5 μm GaAs metal semiconductor field effect transistor circuit fabrication using single layer I-line photoresists.

Autor: Pomerene, Andrew T. S., Greiner, James H., Connolly, John J.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1991, Vol. 9 Issue 6, p2898-2903, 6p