Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Gregory Pitner"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Ting Lei, Lei-Lai Shao, Yu-Qing Zheng, Gregory Pitner, Guanhua Fang, Chenxin Zhu, Sicheng Li, Ray Beausoleil, H.-S. Philip Wong, Tsung-Ching Huang, Kwang-Ting Cheng, Zhenan Bao
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Carbon nanotube thin-film transistor is promising for solution-processed, large-scale flexible electronics, but the device yields remain poor to date. Lei et al. show low-voltage flexible digital and analog circuits based on high-purity and high-yiel
Externí odkaz:
https://doaj.org/article/23d00df723b1411fb85bb4ffeb728362
Autor:
Sheng-Kai Su, Alfonso Sanchez-Soares, Edward Chen, Thomas Kelly, Giorgos Fagas, James C. Greer, Gregory Pitner, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
IEEE Electron Device Letters. 43:1367-1370
Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scali
Autor:
Stephanie M. Bohaichuk, Suhas Kumar, Mahnaz Islam, Miguel Muñoz Rojo, R. Stanley Williams, Gregory Pitner, Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Eric Pop
Publikováno v:
Physical Review Applied. 19
Autor:
Qing Lin, Gregory Pitner, Carlo Gilardi, Sheng-Kai Su, Zichen Zhang, Edward Chen, Prabhakar Bandaru, Andrew Kummel, Han Wang, Matthias Passlack, Subhasish Mitra, H.-S. Philip Wong
Publikováno v:
IEEE Electron Device Letters. 43:490-493
Autor:
Zichen Zhang, Matthias Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai-Tak Lam, Yu-Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar Bandaru
Publikováno v:
ACS Applied Materials & Interfaces. 14:11873-11882
A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to
Autor:
Sheng-Kai Su, Edward Chen, Terry Y. T. Hung, Meng-Zhan Li, Gregory Pitner, Chao-Ching Cheng, Han Wang, Jin Cai, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Hao-Ling Tang, Alex Zettl, Ang-Yu Lu, Vincent Tung, Ju Li, Nannan Mao, Jing Kong, Mohammad Mahdi Tavakoli, Cong Su, Jiangtao Wang, Chao-Ching Cheng, Ming-Hui Chiu, Gregory Pitner, Tomas Palacios, Yuxuan Lin, Lain-Jong Li, Zhengyang Cai, Chih-I Wu, Jihoon Park, Pin-Chun Shen, Ang-Sheng Chou, Xiang Ji, Jeffrey Bokor
Publikováno v:
Nature. 593:211-217
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic dev
Autor:
Bhyrav M. Mutnury, Raymond Pavlak, Gregory Pitner, Douglas S. Winterberg, Wade Smith, Mallikarjun Vasa
Publikováno v:
2021 IEEE 30th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS).