Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Gregory M. Hanket"'
Publikováno v:
IEEE Journal of Photovoltaics. 10:1185-1190
The precursor reaction process for the fabrication of Cu(In,Ga)Se $_{2}$ solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experi
Autor:
Isaac K. Lam, Kyeongchan Moon, Sina Soltanmohammad, Gregory M. Hanket, Woo Kyoung Kim, William N. Shafarman
Publikováno v:
Journal of Vacuum Science & Technology A. 40:033402
The reaction of metallic precursors has become the primary method of industrial manufacturing for Cu(In,Ga)Se2. Commonly used Cu3Ga sputter targets have thus far dictated that the relative Ga composition of these precursors is Ga/(In+Ga) [Formula: se
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
CIGS absorbers are developed using Se-capped precursor films with increased Ga composition. Films are reacted using a rapid thermal process, which uses reaction times on the order of minutes. It is observed that Ga profiles can be controlled by adjus
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
The precursor reaction method for the fabrication of Cu(In,Ga)Se 2 (CIGS) solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab scale exper
Autor:
Robert J. Lovelett, Robert W. Birkmire, Gregory M. Hanket, Babatunde A. Ogunnaike, William N. Shafarman
Publikováno v:
Journal of Process Control. 46:24-33
Copper indium gallium diselenide, Cu(InGa)Se 2 (CIGS) solar cells have achieved efficiencies of 22.3% at the cell level and 17.5% at the module level. CIGS-based modules are also in the early stages of commercialization, with >1 GW annual production
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:765-772
Publikováno v:
IEEE Journal of Photovoltaics. 3:446-450
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 μm have been grown using a three-step selenization/Ar-anneal/sulfization reaction of Cu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent
Publikováno v:
Thin Solid Films. 519:7292-7295
A detailed structural analysis of the (AgCu)(InGa)Se 2 thin film alloy system was undertaken via X-ray diffraction in order to determine its phase behavior and the chalcopyrite phase lattice constants of the alloy system. Thin films were grown by ele
Publikováno v:
Thin Solid Films. 519:7296-7299
We have examined the electronic properties of (Ag 1 − x Cu x )(In 1 − y Ga y )Se 2 (ACIGS) alloys over a wide range of compositions to assess whether such alloys might allow one to achieve larger values of V OC at larger band gaps compared to the
Publikováno v:
Solar Energy Materials and Solar Cells. 95:235-238
The compositional distribution of Ga and S in Cu(InGa)(SeS) 2 films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H 2 Se/H 2 S reaction temperature (490 °C), most Ga remains at the back of