Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Gregory Jolley"'
Publikováno v:
Biophysical Reviews.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd4ed12a7362a9c9f61a5616792810c
https://doi.org/10.1007/s12551-023-01051-y
https://doi.org/10.1007/s12551-023-01051-y
Autor:
Jarek Antoszewski, Nima Dehdashti Akhavan, Gregory Jolley, Lorenzo Faraone, Gilberto A. Umana-Membreno
Publikováno v:
Journal of Electronic Materials. 44:3044-3055
We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecb3b8cf7c13fae029ba9788f1e8798a
https://doi.org/10.1007/s11664-015-3764-y
https://doi.org/10.1007/s11664-015-3764-y
Autor:
Nima Dehdashti Akhavan, Lorenzo Faraone, Gilberto A. Umana-Membreno, Jarek Antoszewski, Gregory Jolley
Publikováno v:
IEEE Transactions on Electron Devices. 62:722-728
In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave IR spectral bands. To achieve the ultimate performance of nBn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a524f751d2b223ac7a6726d06434afa5
https://doi.org/10.1109/ted.2015.2389229
https://doi.org/10.1109/ted.2015.2389229
Autor:
Nima Dehdashti Akhavan, Jarek Antoszewski, Gilberto A. Umana-Membreno, Gregory Jolley, Lorenzo Faraone
Publikováno v:
IEEE Transactions on Electron Devices. 61:3691-3698
In this paper, we present a theoretical study of a band engineered detector design, which significantly improves the performance of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detectors for the midwave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad6989df163685793893b578d9ee6d8
https://doi.org/10.1109/ted.2014.2359212
https://doi.org/10.1109/ted.2014.2359212
Autor:
Gregory Jolley, Nima Dehdashti Akhavan, Lorenzo Faraone, Gilberto A. Umana-Membreno, Jarek Antoszewski
Publikováno v:
IEEE Transactions on Electron Devices. 61:386-393
In this paper, we present the results of a numerical study on the influence of discrete dopant atom distribution and crystal orientation on the electrical characteristics of p-channel silicon nanowire-based transistors using 3-D quantum simulations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76cb19a911edeef5e453a49e8038fb57
https://doi.org/10.1109/ted.2013.2295111
https://doi.org/10.1109/ted.2013.2295111
Autor:
Nima Dehdashti Akhavan, Jarek Antoszewski, Gregory Jolley, Lorenzo Faraone, G. Umana Membreno
Publikováno v:
2014 Conference on Optoelectronic and Microelectronic Materials & Devices.
In this paper we present a theoretical study on the influence of band-to-band-tunnelling (BTBT) in HgCdTe-based nBn detectors for longwave infrared (LWIR) applications. Numerical modelling shows that BTBT strongly depends on the barrier parameters an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e5783524d4c70f6b62f4343145e0644
https://doi.org/10.1109/commad.2014.7038696
https://doi.org/10.1109/commad.2014.7038696
Autor:
Lorenzo Faraone, Nima Dehdashti Akhavan, Gilberto A. Umana-Membreno, Gregory Jolley, Jarek Antoszewski
Publikováno v:
2014 International Conference on Nanoscience and Nanotechnology.
The influence of impurity doping distribution in the channel region of p-type silicon nanowire FET has been studied using atomistic three-dimensional quantum simulator based on non-equilibrium Green's function formalism. The valence band has been mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5bbea05373421459bc5ab3b87147f0
https://doi.org/10.1109/iconn.2014.6965250
https://doi.org/10.1109/iconn.2014.6965250
Publikováno v:
Nanoscale. 2(7)
We report on a detailed analysis of the effects of doping on the main device parameters of In(0.5)Ga(0.5)As/GaAs/Al(0.2)Ga(0.8)As quantum dots-in-a-well infrared photodetectors. Due to the relatively large conduction band offset of GaAs/Al(0.2)Ga(0.8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f9afaef866d2baf5f788aec562eb53c
https://pubmed.ncbi.nlm.nih.gov/20648338
https://pubmed.ncbi.nlm.nih.gov/20648338
Autor:
Gilberto A. Umana-Membreno, Gregory Jolley, Hemendra Kala, Kouichi Akahane, Mikhail Patrashin, Jaroslaw Antoszewski, Nima Dehdashti Akhavan, Lorenzo Faraone
Publikováno v:
Applied Physics Letters. 106:032103
In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::736d430579b85eb73d55bb2812e238d6
https://doi.org/10.1063/1.4906489
https://doi.org/10.1063/1.4906489
Autor:
Lorenzo Faraone, Nima Dehdashti Akhavan, Gilberto A. Umana-Membreno, Gregory Jolley, Jarek Antoszewski
Publikováno v:
Journal of Applied Physics. 112:094505
This paper present a study of carrier transport in graphene nanoribbon (GNR) transistors using three-dimensional quantum mechanical simulations based on a real-space approach of the non-equilibrium Green's function formalism in the ballistic and diss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc06c94258ab72753747a335acb61304
https://doi.org/10.1063/1.4764318
https://doi.org/10.1063/1.4764318