Zobrazeno 1 - 10
of 620
pro vyhledávání: '"Gregory J, Salamo"'
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-8 (2022)
Abstract Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field du
Externí odkaz:
https://doaj.org/article/e4589902f9f64e9886a10c5dffad76c1
Autor:
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 13, Iss 11, p 1557 (2023)
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques.
Externí odkaz:
https://doaj.org/article/83d97a843ebc47b791ad56660221ca9e
Autor:
Daqian Guo, Jian Huang, Mourad Benamara, Yuriy I. Mazur, Zhuo Deng, Gregory J. Salamo, Huiyun Liu, Baile Chen, Jiang Wu
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ad48392282f2b1710120c6a32fda855
https://doi.org/10.1109/jqe.2023.3238754
https://doi.org/10.1109/jqe.2023.3238754
Autor:
Chen Li, Yurii Maidaniuk, Andrian V. Kuchuk, Yuriy I. Mazur, Mourad Benamara, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Materials & Design, Vol 190, Iss , Pp - (2020)
In this work, we present the investigation of InN/GaN multiple-quantum-well (MQW) growth by plasma-assisted molecular beam epitaxy using in-situ reflection high-energy electron diffraction (RHEED) to monitor the growth process. The analysis of the RH
Externí odkaz:
https://doaj.org/article/5ce984843fc144559ed1a85875c20fd9
Autor:
Jingtao Liu, Shiping Luo, Xiaohui Liu, Ying Wang, Chunsheng Wang, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
Publikováno v:
Crystals, Vol 12, Iss 3, p 319 (2022)
Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface q
Externí odkaz:
https://doaj.org/article/c3a8a6e2d8dd4079b8909ac51e956cc3
Autor:
Qing Yuan, Baolai Liang, Chuan Zhou, Ying Wang, Yingnan Guo, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs con
Externí odkaz:
https://doaj.org/article/1a7030e06efc4fc6accc3c26db1ec4c1
Autor:
Hugh O. H. Churchill, Gregory J. Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract We demonstrate that the atom chain structure of Te allows it to be exfoliated as ultra-thin flakes and nanowires. Atomic force microscopy of exfoliated Te shows that thicknesses of 1–2 nm and widths below 100 nm can be exfoliated with this
Externí odkaz:
https://doaj.org/article/77d43c2ac2c247d58a50e1a3f595ce6e
Autor:
Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-9 (2017)
Abstract Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods sh
Externí odkaz:
https://doaj.org/article/6e7ef2e79a4b482db74198858c73dff7