Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gregory Enyedi"'
Autor:
Fanny Delaguillaumie, Alexandre Reinhardt, Marie Bousquet, J. Lugo, Pierre Perreau, Gregory Enyedi, Gael Castellan, Catherine Maeder-Pachurka, Alice Joulie, C.-L. Hsu
Publikováno v:
2021 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS).
Film bulk acoustic wave resonators (FBAR) based on LiNbO 3 single crystal piezoelectric films offer promising perspectives towards wide bandwidth filters. We present resonators based on the Y+36° crystal orientation, which promotes the excitation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9676732abba26129e9b0d1b96504f5d8
https://doi.org/10.1109/eftf/ifcs52194.2021.9604280
https://doi.org/10.1109/eftf/ifcs52194.2021.9604280
Autor:
Pierre Perreau, Fanny Delaguillaumie, Alexandre Reinhardt, Clement Eleouet, Gregory Enyedi, Thierry Farjot, Marie Bousquet, Christophe Billard, Alice Joulie, Julien Delprato, Gael Castellan, Catherine Maeder-Pachurka
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS).
In this work, Film Bulk Acoustic Resonators (FBAR) based on 250 nm-thick Y+163°-cut LiNbO3 films have been fabricated using a layer transfer process (4-inch) including patterned bottom electrodes and a sacrificial layer cavity. As previously reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80e03c805975f1bf0ac90dc5e720685
https://doi.org/10.1109/ius46767.2020.9251654
https://doi.org/10.1109/ius46767.2020.9251654
Autor:
Alice Joulie, F.-X. Darras, A. M. Papon, Fanny Delaguillaumie, Alexandre Reinhardt, Patrice Gergaud, Y. Lamy, P. S. Pokam Kuisseu, Marie Bousquet, Catherine Maeder-Pachurka, Frédéric Mazen, M. Bertucchi, Gael Castellan, D. Mariolle, B. Sailler, Pierre Perreau, Christophe Billard, Gregory Enyedi
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS).
In the present work, Film Bulk Acoustic Resonators (FBAR) based on 700 nm-thick LiTaO3 films have been fabricated and characterized. Two orientations of single crystal LiTaO3 thin films have been investigated: (i) $\mathrm{Y}+42^{\circ}$ -cut, in whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38189a7e0175fd11d19749eead337c1b
https://doi.org/10.1109/ius46767.2020.9251463
https://doi.org/10.1109/ius46767.2020.9251463
Autor:
Aurelio Borzi, Alexandre Reinhardt, Catherine Maeder-Pachurka, Selsabil Sejil, Gregory Enyedi, Denis Mercier, Pierre Perreau, Pauline Sylvia Pokam Kuisseu, Jerome Dechamp, Michael Bertucchi, Gael Castellan, Marc Zussy, Frédéric Mazen, Christophe Billard, Julien Delprato, Marie Bousquet
Publikováno v:
2019 IEEE International Ultrasonics Symposium (IUS).
In this paper, Y+163°-cut LiNbO 3 (LNO) Film Bulk Acoustic Resonators (FBAR) with patterned bottom electrodes (AlSi or W) and a sacrificial layer cavity have been fabricated using a layer transfer process (4-inch). Unlike previous work based on film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7c0e85c538f85cbc5d20e31a77845f
https://doi.org/10.1109/ultsym.2019.8925617
https://doi.org/10.1109/ultsym.2019.8925617
Autor:
Pascal Besson, Samuel Tardif, François Rieutord, Thierry Enot, Pierre Montméat, Gregory Enyedi, Isadora De Nigris Brandolisi, Riadh Kachtouli, Frank Fournel
Publikováno v:
PRiME 2016/230th ECS Meeting
PRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.247-252, ⟨10.1149/07509.0247ecst⟩
PRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.247-252, ⟨10.1149/07509.0247ecst⟩
Applying tensile strain on an undirect band gap semiconductor crystal is a very promising way to tune it into a direct band gap [1] , [2] . This basic feature can be an outstanding progress for the use of classical semiconductor as silicon or germani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72d95b35c1ec76e1d16b3a95404467a8
https://doi.org/10.1149/07509.0247ecst
https://doi.org/10.1149/07509.0247ecst
Autor:
Julie Widiez, Bastien Letowski, Pierre Perreau, Jean-Christophe Crebier, Perceval Coudrain, Kremena Vladimirova, Gregory Enyedi, Nicolas Rouger
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC)
2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩
2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, France. pp.1251-1257, ⟨10.1109/ECTC.2018.00193⟩
International audience; This paper presents a wafer-level pre-packagingtechnology for power devices. The concept consists in theimplementation of a thick 3D patterned copper leadframeensuring the interconnections of the power devices amongthem or wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02f98f81ae7cfcdd1209324739ad54c4
https://cea.hal.science/cea-02185324
https://cea.hal.science/cea-02185324
