Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Gregory Breyta"'
Autor:
Linda K. Sundberg, Daniel P. Sanders, A. D. Allen, R. Sooriyakumaran, R. A. Dipietro, P. J. Brock, Gregory Breyta
Publikováno v:
Journal of Photopolymer Science and Technology. 19:569-572
The fundamental properties of a series of hexafluoroalcohol-bearing methacrylate polymers (HFA-MA) are reported here. The material behavior is heavily influenced by the linking group between the methacrylate ester (or polymer backbone) and the hexafl
Mechanistic Studies of the Acidolysis Reactions Occurring in Silicon-Containing Bilayer Photoresists
Autor:
Gregory M. Wallraff, Mark H. Sherwood, Ilya Zharov, Gregory Breyta, Carl E. Larson, Ratnam Sooriyakamaran, Richard Anthony DiPietro, Josef Michl
Publikováno v:
Chemistry of Materials. 14:656-663
As the feature sizes of semiconductor devices continue to shrink, there is an increasing interest in thin film imaging approaches such as silicon-based bilayer resists. We have developed such a res...
Autor:
Mark H. Sherwood, H. D. Truong, Hiroshi Ito, Gregory Breyta, Carl E. Larson, Robert D. Allen, Dolores C. Miller, P. J. Brock, Gregory M. Wallraff, Nicolette Fender
Publikováno v:
Journal of Photopolymer Science and Technology. 14:583-593
Unexpectedly good UV transmittance at 157nm of poly(norbornene sulfone) bearing a pendant hexafluoroisopropanol functionality has prompted us to employ this fluoroalcohol as an acid group for the design of chemical amplification resists for use in 15
Autor:
Gregory Breyta, R. Sooriyakumaran, Carl E. Larson, Qinghuang Lin, Karen Petrillo, Marie Angelopoulos, Juliann Opitz, Gregory M. Wallraff, D. LaTulip, Katherina Babich, John P. Simons, R. A. Dipietro, Mark H. Sherwood, Donald C. Hofer, Debra Fenzel-Alexander, J. Muete
Publikováno v:
Journal of Photopolymer Science and Technology. 11:673-679
Thin film imaging resists (TSI and Bilayer systems) confine the imaging to a thin resist film (in the case of a bilayer system) which is subsequently transferred to a thicker polymeric underlayer. This approach has a number of potential advantages in
Autor:
Thomas I. Wallow, Carl E. Larson, Juliann Opitz, Robert D. Allen, Richard Anthony DiPietro, Ratnam Sooriyakumaran, Gregory Breyta, Donald C. Hofer
Publikováno v:
Journal of Photopolymer Science and Technology. 10:503-510
The impact of photoacid generator (PAG) structure has been largely ignored for 193nm single layer resists. Most published work to date has involved the use of triflic or metallic (antimonate or arsenate) photoacids. The importance of the PAG structur
Autor:
Hoosung Lee, R. Sooriyakumaran, William D. Hinsberg, William P. England, Nicholas J. Clecak, Gregory Breyta, Do Y. Yoon, Hiroshi Ito
Publikováno v:
Journal of Photopolymer Science and Technology. 6:547-562
A molecular design for stabilization of chemical amplification resists toward airborne contamination is described, which is based on our observation that glass transition temperatures (Tg) primarily govern the absorption of N-methylpyrrolidone (NMP)
Autor:
Gregory M. Wallraff, Gregory Breyta, Karen Petrillo, Dario Gil, W. Pierson, Carl E. Larson, Dolores C. Miller, Linda K. Sundberg
Publikováno v:
SPIE Proceedings.
The interaction of water with the photoresist film stack is proving to be a key factor in the current generation of 193-nm immersion lithography. Photoresist performance, CD control, optics lifetime, defectivity, overlay and possibly even tool throug
Autor:
Eric F. Connor, Kaushal Patel, Thomas I. Wallow, Linda K. Sundberg, Phillip J. Brock, Gregory Breyta, Pushkara Rao Varanasi, Robert D. Allen, Blake Davis, Carl E. Larson, Ratnam Sooriyakumaran, Richard Anthony DiPietro
Publikováno v:
SPIE Proceedings.
Development of 193-nm negative resists that meet the stringent performance requirements of sub-100 nm resolution with conventional 0.26 N TMAH developer has proven to be a significant challenge. Most of the systems that are currently under developmen
Autor:
Masaki Okazaki, Hiroshi Ito, Gregory Breyta, Hoa D. Truong, Nicolette Fender, Gregory M. Wallraff, Dolores C. Miller, Phillip J. Brock, Carl E. Larson, Robert D. Allen
Publikováno v:
SPIE Proceedings.
Our primary platform for 157 nm positive resists is built on a copolymer of t-butyl 2-trifluoromethylacrylate (TBTFMA) andnorbornene bearing hexafluoroisopropanol (NBHFA) as an acid group, which is prepared by radical copolymerization. Theradical cop
Publikováno v:
SPIE Proceedings.
Over the years for enhanced resolution, electron beam exposure tools have migrated to higher accelerating potentials. High kV exposure requires faster resist to offset the loss of absorbed radiation. In addition, in order to maintain throughput in ma